Photoanodic properties of In/ß-Ga2O3 nanostructures fabricated under hydrogen reducing ambient by the vapour-phase growth method
Küçük Resim Yok
Tarih
2023
Dergi Başlığı
Dergi ISSN
Cilt Başlığı
Yayıncı
Elsevier
Erişim Hakkı
info:eu-repo/semantics/closedAccess
Özet
A great deal of efforts have been dedicated to reduce carrier recombination problem in ss-Ga2O3 using strategies, such as doping, compositing, and interfacing with different materials to enhance device performance. However, reports are rarely available for integrating In with ss-Ga2O3 for photoelectrochemical applications. Herein, we reports the effect of In addition in ss-Ga2O3 to produce In/ ss-Ga2O3 nanocomposite for photoelectrocatalysis. The intrinsic sample exhited mixed-phase (a-ss)-Ga2O3, whereas the composite showed a mixed-phase ss-Ga2O3-in-dium. A significant amount of In was detected on the heterogenous film, suggesting that doping was exceeded. A significant bandgap narrowing was observed from 4.79 to 4.45 eV upon In incorporation. The presence of In in ss-Ga2O3 resulted in a shift in photoluminescence emission from violet to green light. Photoelectrochemical measurements in 0.1 M KOH solution demonstrated a relatively high photocurrent density of 1.720 mA/cm2 at 1.0 V vs. Ag/AgCl for the In/ ss-Ga2O3 heterogeneous film.
Açıklama
Anahtar Kelimeler
Indium-incorporation, Gallium oxide, Photoelectrocatalysis, Photoelectrochemical, Chemical vapour depsotion
Kaynak
Optical Materials
WoS Q Değeri
Q1
Scopus Q Değeri
Q1
Cilt
145