Effect of RF Power Density on Micro- and Macro-structural Properties of PECVD Grown Hydrogenated Nanocrystalline Silicon Thin Films
Küçük Resim Yok
Tarih
2016
Yazarlar
Dergi Başlığı
Dergi ISSN
Cilt Başlığı
Yayıncı
Amer Inst Physics
Erişim Hakkı
info:eu-repo/semantics/closedAccess
Özet
This contribution provides the comparison between micro-and macro-structure of hydrogenated nanocrystalline silicon (nc-Si:H) thin films grown by plasma enhanced chemical vapor deposition (PECVD) technique under different RF power densities (P-RF: 100-444 mW/cm(2)). Micro-structure is assessed through grazing angle X-ray diffraction (GAXRD), while macro-structure is followed by surface and cross-sectional morphology via field emission scanning electron microscopy (FE-SEM). The nanocrystallite size (similar to 5 nm) and FE-SEM surface conglomerate size (similar to 40 nm) decreases with increasing P-RF, crystalline volume fraction reaches maximum at 162 mW/cm(2), FE-SEM cross-sectional structure is columnar except for the film grown at 162 mW/cm(2). The dependence of previously determined 'oxygen content-refractive index' correlation on obtained macro-structure is investigated. Also, the effect of P-RF is discussed in the light of plasma parameters during film deposition process and nc-Si: H film growth models.
Açıklama
9th International Physics Conference of the Balkan-Physical-Union (BPU) -- AUG 24-27, 2015 -- Istanbul Univ, Beyazit Campus, Istanbul, TURKEY
Anahtar Kelimeler
Crystalline, Performance
Kaynak
9th International Physics Conference of the Balkan Physical Union (Bpu-9)
WoS Q Değeri
N/A
Scopus Q Değeri
N/A
Cilt
1722
