Jubu, Peverga R.Danladi, E.Chahul, H. F.Aldayyat, A.Yusof, Y.Chahrour, Khaled M.Kyesmen, P. I.2024-09-292024-09-2920230925-34671873-1252https://doi.org/10.1016/j.optmat.2023.114424https://hdl.handle.net/20.500.14619/5183A great deal of efforts have been dedicated to reduce carrier recombination problem in ss-Ga2O3 using strategies, such as doping, compositing, and interfacing with different materials to enhance device performance. However, reports are rarely available for integrating In with ss-Ga2O3 for photoelectrochemical applications. Herein, we reports the effect of In addition in ss-Ga2O3 to produce In/ ss-Ga2O3 nanocomposite for photoelectrocatalysis. The intrinsic sample exhited mixed-phase (a-ss)-Ga2O3, whereas the composite showed a mixed-phase ss-Ga2O3-in-dium. A significant amount of In was detected on the heterogenous film, suggesting that doping was exceeded. A significant bandgap narrowing was observed from 4.79 to 4.45 eV upon In incorporation. The presence of In in ss-Ga2O3 resulted in a shift in photoluminescence emission from violet to green light. Photoelectrochemical measurements in 0.1 M KOH solution demonstrated a relatively high photocurrent density of 1.720 mA/cm2 at 1.0 V vs. Ag/AgCl for the In/ ss-Ga2O3 heterogeneous film.eninfo:eu-repo/semantics/closedAccessIndium-incorporationGallium oxidePhotoelectrocatalysisPhotoelectrochemicalChemical vapour depsotionArticle10.1016/j.optmat.2023.1144242-s2.0-85173577664Q1145WOS:001091772900001Q1