Tecimer, HuseyinTan, Serhat OrkunAltindal, Semsettin2024-09-292024-09-2920180018-93831557-9646https://doi.org/10.1109/TED.2017.2778023https://hdl.handle.net/20.500.14619/6168The capacitance-voltage (C-V) and conductance-voltage (G/omega-V) data for Al/(0.07Zn-doped polyvinyl alcohol)/p-Si structure have been performed (at +/- 6-V biases) in a frequency interval of 1-400 kHz at room temperature. Utilizing form conductance method, N-ss values were specified from admittance measurements. The reason of higher C and G values obtained at lower frequencies was ascribed to the surface states located atMS interface and insulator layer. The increment at capacitance and conductance was occurred in consequence of the ac signal that followed easily by the surface states at these lower frequencies. The surface states existence also generates peaks at conductance versus logarithm of frequency (Gp/omega-log(f)) plots under distinct voltage values. The acquired values of Nss and relaxation time (tau) are in the interval of 1.94 x 10(14)-1.67 x 10(14) eV(-1).cm(-2) and 2.81 x 10(-3)-1.30 x 10(-5) s, respectively.eninfo:eu-repo/semantics/closedAccessAdmittance measurementsfrequency dependencemetal-polymer-semiconductor (MPS) structurerelaxation timesurface statesArticle10.1109/TED.2017.27780232-s2.0-850375736082361Q223165WOS:000418753200033Q2