Jaf, Hawre Azad OthmanPakma, OsmanOzden, SadanKariper, I. AfsinKorkmaz, SatiyeGuneser, M. Tahir2024-09-292024-09-2920230957-45221573-482Xhttps://doi.org/10.1007/s10854-023-11583-4https://hdl.handle.net/20.500.14619/3991The remarkable advancements achieved in the field of perovskite materials have spurred the development of photodetectors, playing a pivotal role in diverse optoelectronic applications. Among these, heterostructured perovskite-based photodetectors have emerged as a superior choice, surpassing the performance capabilities of their pure perovskite counterparts. This study presents the fabrication of an rGO/MAPbI3 heterostructured photodetector via the spin-coating technique. A comprehensive structural analysis of the device was conducted, encompassing X-ray diffraction, scanning electron microscopy, and Fourier-transform infrared spectroscopy. Current-voltage (I-V) and capacitance-voltage (C-V) measurements, performed under various illumination conditions as well as in the absence of light, unequivocally demonstrate the photodiode characteristics of the device. The data reveal a direct correlation between illumination intensity and both current and capacitance, substantiating the photodetector's responsiveness. Notably, the calculated photosensitivity values S (%) of the Al/Gra/p-Si device, measured under a reverse bias of - 2 V, exhibit a range, varying from 42,000 to 79,300%. Furthermore, observations suggest a decrease in series resistance with increasing illumination intensity, while the ideality factor and barrier height values show an opposite trend. In addition, frequency-dependent measurements divulge a decrease in capacitance as the frequency escalates. These findings can be elucidated through the interactions involving light-induced charges at the interface between the rGO oxide layer and the semiconductor, coupled with the dynamic fluctuations in quasi-Fermi levels within the state of equilibrium.eninfo:eu-repo/semantics/closedAccessSolar-CellsIntensityGrowthArticle10.1007/s10854-023-11583-42-s2.0-8517844208034Q234WOS:001112931100003Q2