Guneser, Muhammet TahirElamen, HasanBadali, YosefAltindal, Semsettin2024-09-292024-09-2920230921-45261873-2135https://doi.org/10.1016/j.physb.2023.414791https://hdl.handle.net/20.500.14619/5206In this study, the electrical and dielectric characteristics of the Au/(RuO2:PVC)/n-Si structures were analyzed using the impedance spectroscopy method, including capacitance/conductance (C - G/omega) measurements in wide voltage and frequency ranges (+4 V, 5 kHz - 5 MHz) at room temperature. The main electrical parameters such as concentration of donor atoms (N-D), diffusion potential (V-D), depletion layer thickness (W-D), Fermi energy level (E-F), barrier height (phi(B)), and maximum electric field (E-m) were extracted for each measured frequency. The phi(B), W-D, and E-F values are increasing with increased frequency, while N-D and E-m exponentially decrease. The surfacestates (N-SS) were evaluated using the low-high-frequency capacitance technique. Furthermore, the basic dielectric parameters such as tangent-loss (tan delta), electrical conductivity (sigma(ac)), real and imaginary parts of epsilon*, electric-modulus (M*), and complex impedance (Z*) were investigated. The obtained results indicate that the N-SS, and RuO2:PVC organic interlayer are more effective on C and G/omega measurements.eninfo:eu-repo/semantics/closedAccessSchottky structuresElectrical and dielectric propertiesC-V and G/omega-V characteristicsRuO2:PVCArticle10.1016/j.physb.2023.4147912-s2.0-85150246513Q2657WOS:001036178500001Q2