Mohammed, A.A.Demirel, H.2024-09-292024-09-2920231735-2827https://doi.org/10.22068/IJEEE.19.4.2862https://hdl.handle.net/20.500.14619/9063In the past twenty years, low-voltage and power design have gained attention in analog VLSI design, particularly for high-performance and portable integrated circuits (ICs). Because of the increasing density of large-scale integration, a single silicon A.S.I. chip could have thousands or even millions of transistors on it. A rise in integration levels led to the development of Fin-type Field Effect Transistor (FinFETs) technology. In this research, an improved circuit design for a floating active inductor (FAI) and quadrature sinusoidal oscillator (QSO) is implemented employing only two active filters, the Z-copy-Voltage Differential Transimpedance Amplifier (Zc-VDTA). The purpose of the FAI is to contain two Zc-VDTA and one resistor with a ground capacitor, and it is easy to integrate the parameters of the Zc-VDTA bias current (IB) through the adjustment of the circuit. To verify the dependability of the circuits designed using floating active inductance circuits, a Butterworth fourth-order low-pass filter was created via component replacement. All the simulations have been carried out on 7 nm using linear technology SPICE, and cadence virtuoso tool. © 2023, Iran University of Science and Technology. All rights reserved.eninfo:eu-repo/semantics/closedAccessFin Type Field Effect Transistor (FinFETs)Floating Active Inductor (FAI)Integrated Circuits (ICs)Quadrature Sinusoidal Oscillator (QSO)Integration of Quadrature Oscillator and Floating Inductor in FinFET Transistor Design: Innovations and ApplicationsArticle10.22068/IJEEE.19.4.28622-s2.0-851824667514Q419