Yildirim, Hasan2024-09-292024-09-2920211569-44101569-4429https://doi.org/10.1016/j.photonics.2020.100859https://hdl.handle.net/20.500.14619/5192Symmetric and asymmetric quantum wells of ZnCdO structures grown on ZnO in non-polar orientations are investigated for their potential in THz emission due to the intersubband transitions between the subbands in the conduction band. The Schro?dinger and Poisson equations are solved self-consistently for the square and step barrier quantum wells of the Zn1-xCdxO layers for x up to 0.25. The results are represented as functions of the Cd concentration in the well and step-barrier layers and their dimensions. The role of the many-body effects on the intersubband transitions is discussed. It is found that emission wavelengths between 4.5 and 8.55 THz in the step-barrier quantum wells are possible in the case of an optical pumping at a wavelength in the range of 8.27-15.7 mu m. The depolarization and excitonic shifts are found to contribute to the bare intersubband transition energies as much as their 15% at maximum.eninfo:eu-repo/semantics/closedAccessZnCdOQuantum wellNon-polar growthIntersubband transitionNon-polar ZnCdO/ZnO step-barrier quantum wells designed for THz emissionArticle10.1016/j.photonics.2020.1008592-s2.0-85095727912Q243WOS:000632603600005Q2