Cicek, O.Tecimer, H. UsluTan, S. O.Tecimer, H.Altindal, S.Uslu, I.2024-09-292024-09-2920161359-83681879-1069https://doi.org/10.1016/j.compositesb.2016.05.042https://hdl.handle.net/20.500.14619/4523Au/n-GaAs (MS) type Schottky diodes (SDs) were fabricated with and without pure and Gr-doped PVA interlayer to evaluate the effects of Gr-doped PVA interlayer on the basic electrical parameters (i.e. saturation current (I-o), ideality factor (n), barrier height (Phi(Bo)), series (R-s) and shunt resistances (R-sh) both under dark and illuminated conditions (50-200 W), at room temperature. Using different calculation methods (i.e. thermionic emission (TE) model, Ohm's Law and Norde's method), these parameters were obtained from the current -voltage (I -V) data and compared with each other in various conditions. In our research, it is clear that there are a decrease in R-s value and an increase in R-sh value for Gr-doped PVA in comparison with the pure PVA structure under dark and illuminated conditions, therefore rectifier rate (RR = I-F/I-R), is the proof of the quality for diodes, significantly improved. Also, the Phi(Bo) values with interlayer (pure and Gr-doped PVA) are lower than without. Consequently, these results indicate that the PVA (pure and Gr-doped) changed effectively the BH according to other structure and, moreover, Gr-doped PVA layer significantly improved the quality of Au/PVA/n-GaAs structure under dark and illuminated conditions. (C) 2016 Elsevier Ltd. All rights reserved.eninfo:eu-repo/semantics/closedAccessNano-structuresPolymer (textile) fibreElectrical propertiesArticle10.1016/j.compositesb.2016.05.0422-s2.0-84971224783268Q126098WOS:000379106400026Q1