Tezel, MeydaneriGueven, F. N.Kariper, I. . A.2024-09-292024-09-2920221387-70031879-0259https://doi.org/10.1016/j.inoche.2022.109766https://hdl.handle.net/20.500.14619/4780In this study, perovskite thin-film electrodes were produced by doping different amounts of copper (Cu% = 1, 2, 4, 6, 8) on fluorine tin oxide (FTO) substrates at room temperature by chemical bath deposition (CBD) and dip -coating methods. The structural properties of these thin films were determined by X-ray diffraction (XRD), and their chemical compositions were analyzed by EDX (Energy Dispersive X-ray). Surface morphologies were imaged with FESEM. Time-dependent current-voltage (I-V) measurements were taken with a Keithley 2400 SourceMeter. The specific capacitance of each sample was measured at room temperature, in the dark at scan-ning rates of 10, 25, and 50 mV/s in the range of-0.5 to 0.7 V. The maximum specific capacitance was observed on 2% Cu-doped perovskite thin film (761 F/g) at the lowest scanning speed (10 mV/s). Regarding EDX analysis, 0.44-3.20-1.23-1.83-0.98% Cu atoms were detected on the surface of 1-2-4-6-8% Cu-doped structures. The higher precipitation in the structure will cause a resistance between the bands and thus decrease the load storage capacity.eninfo:eu-repo/semantics/closedAccessPerovskiteSupercapacitor electrodeNanocompositeIn-plane capacitanceIn-plane time-dependent I-V methodArticle10.1016/j.inoche.2022.1097662-s2.0-85135691224Q2143WOS:000835510500001Q1