Kabalci, I.Hewak, D.W.2024-09-292024-09-292016978-150902439-1https://doi.org/10.1109/ISNE.2016.7543396https://hdl.handle.net/20.500.14619/93225th International Symposium on Next-Generation Electronics, ISNE 2016 -- 4 May 2016 through 6 May 2016 -- Hsinchu -- 123312In this research, we report Er3+ doped chalcogenide based glasses, well known for infrared transparency with various applications in the photonics and optoelectronics. Er3+ doped chalcogenide glasses were prepared by using vertical furnace with an argon gas atmosphere. For the structural and spectroscopic measurements, thin films at about 460nm thicknesses were deposited by using radio-frequency (RF) magnetron sputtering technique. Er3+ deposited thin films were annealed at different temperature as 450, 500, 550, and 600°C in the tube furnace and rapid thermal annealer (RTA) at 2°C/min, and 10°C/min heating rate, respectively. As a result, absorptions, luminescence, and structural properties of the Er3+ ion doped GLS thin films were affected from different annealing process. © 2016 IEEE.eninfo:eu-repo/semantics/closedAccessChalcogenidephotolitoghraphythin filmswaveguideConference Object10.1109/ISNE.2016.75433962-s2.0-84985906541N/A