Yildirim, H.2024-09-292024-09-2920110030-4018https://doi.org/10.1016/j.optcom.2010.12.041https://hdl.handle.net/20.500.14619/9557Silicon nitride rib waveguides are numerically studied by use of a full-vectorial mode solver program based on finite difference method. Dispersion parameters, up to the third-order, are computed for waveguides of heights 0.8 ?m, 0.9 ?m, and 1 ?m. Like silicon-on-insulator waveguides, silicon nitride rib waveguides allow us to tailor dispersion parameters at telecom wavelengths. Deeply-etched silicon nitride rib waveguides of height up to 1.5 ?m are investigated for correct geometries to achieve polarization independence. The computations lead to a minimum etch depth which can be written as linear function of the waveguide height. Etch-depth and waveguide height dependencies of the nonlinear refractive index coefficient of the silicon nitride are studied. It is shown that third-order optical nonlinearities in silicon nitride rib waveguides can be enhanced by suitable choices of waveguide parameters. © 2010 Elsevier B.V. All rights reserved.eninfo:eu-repo/semantics/closedAccessDispersion (waves)DispersionsNonlinear opticsRefractive indexSilicon nitrideDispersion parametersEtch depthFull-vectorial mode solverLinear functionsNon-linear optical propertiesNonlinear refractive index coefficientPolarization independenceRib waveguidesSilicon on insulator waveguideTelecom wavelengthsThird-orderThird-order optical nonlinearitiesWaveguide parameterWaveguidesArticle10.1016/j.optcom.2010.12.0412-s2.0-7995167546720357Q22031284