Kanbur, YasinCoskun, HalimeGlowacki, Eric DanielIrimia-Vladu, MihaiSariciftci, Niyazi SerdarYumusak, Cigdem2024-09-292024-09-2920191566-11991878-5530https://doi.org/10.1016/j.orgel.2018.12.004https://hdl.handle.net/20.500.14619/5184Robust organic thin-film transistors (OTFTs) with high temperature stability allow device integration with mass production methods like thermoforming and injection molding, and enable operation in extreme environment applications. Herein we elaborate a series of materials to make suitable gate dielectric and active semiconductor layers for high temperature stable OTFTs. We employ an anodized aluminum oxide layer passivated with cross-linked low-density polyethylene (LD-PE) to form a temperature-stable gate capacitor. As the semiconductor, we use quinacridone, an industrial organic colorant pigment produced on a mass scale. Evaporated MoOx/Ag source and drain electrodes complete the devices. Here we evaluate the performance of the OTFTs healing them in air from 100 degrees C in 25 degrees C increments up to 225 degrees C, holding each temperature for a period of 30 minutes. We find large differences in stability between quinacridone and its dimethylated derivative, with the former showing the best performance with only a factor of 2 decline in mobility after healing at 225 degrees C, and unaffected on/off ratio and threshold voltage. The approach presented here shows how industriallys calable fabrication of thermally robust OTFTs can be rationalized.eninfo:eu-repo/semantics/closedAccessQuinacridoneQuinacridone transistorPigment transistorOrganic field effect transistorsThermally stable transistorInjection moldingThermoformingAir stable transistorHydrogen-bonded semiconductorVacuum evaporated polyethyleneArticle10.1016/j.orgel.2018.12.0042-s2.0-8505857847657Q15366WOS:000455249800008Q2