Baydilli, E. EvcinTan, S. O.Tecimer, H. UsluAltindal, S.2024-09-292024-09-2920200921-45261873-2135https://doi.org/10.1016/j.physb.2020.412457https://hdl.handle.net/20.500.14619/520012th International Symposium on Hysteresis Modeling and Micromagnetics (HMM) -- MAY 19-22, 2019 -- Heraklion, GREECEThe possible current-transport mechanisms (CTMs) of Au/(%7Gr-doped)PVA/n-GaAs structure was examined between 80 K and 360 K. The forward bias semi-logarithmic I-V curves have two different linear regions; as 0.30 V and 0.56 V (Region I), and 0.72 V and 0.92 V (Region II). Contrary to classical thermionic emission (TE) theory, the ideality factor (n) decreases but the zero bias barrier height (Phi(Bo)) increases while the temperature increases for both regions. The plots of n vs Phi(B0), q/2 kT vs Phi(Bo) and q/2 kT vs n(-1)-1 have two linear regions from 80 K to 160 K and 180 K-360 K. This indicates the Double Gaussian Distribution (DGD). Experimental Richardson constant (A*) was acquired as 8.73 A/cm(2)K(2) and 8.14 A/cm(2)K(2) for Region I and II which are quite close to theoretical A* value for n-GaAs. Consequently, the predominant CTMs at M/S interfaces can be clarified by DGD on the basis of TE.eninfo:eu-repo/semantics/closedAccessCurrent-transport mechanismsMetal-polymer-semicondutorThermionic emissionBarrier heightGraphene dopingConference Object10.1016/j.physb.2020.4124572-s2.0-85089469432Q2598WOS:000581149700014Q3