Arslan, BilalTan, Serhat OrkunOrak, IkramTecimer, Habibe Uslu2024-09-292024-09-2920210040-60901879-2731https://doi.org/10.1016/j.tsf.2021.138968https://hdl.handle.net/20.500.14619/5415Frequency dependent capacitance (C) and conductance (G/omega) data for Au/n-Si structures fabricated at room temperature without interlayers and with 5 nm and 10 nm aluminium-oxide (Al2O3) interlayer thicknesses are investigated. The Al2O3 interlayers were deposited by atomic layer deposition. Data on the complex electric modulus (M*) and alternating current electrical conductivity (sigma(ac)) values are acquired for the three structures in the 3 kHz-3 MHz frequency range between (-3 V) - (+5 V) bias interval and compared. It was observed that the C and G/omega values decreased with the increase in frequency and interlayer thickness and that the frequency increases as a result of polarization which also increases M*, especially in 5 nm and 10 nm interlayered structures. Frequency and interlayer thickness increment have a positive impact by increasing sigma(ac), while conductivity has been shown to be highly sensitive to the presence of an interlayer and to its thickness.eninfo:eu-repo/semantics/closedAccessCapacitance-conductanceConductivityFrequency-polarization responseInterlayer thicknessMetal-SemiconductorArticle10.1016/j.tsf.2021.1389682-s2.0-85117713067Q2738WOS:000718885300002Q3