Tecimer, Huseyin2024-09-292024-09-2920180957-45221573-482Xhttps://doi.org/10.1007/s10854-018-0146-2https://hdl.handle.net/20.500.14619/3980The frequency effect on the dielectric features of Zn doped polymer interlayered metal-semiconductor (MS) structure has been investigated by admittance measuring methods. As a function of frequency and voltage, the parameters such as dielectric constant (epsilon), dielectric loss (epsilon), dielectric loss tangent (tan), and ac electrical conductivity (sigma(ac)) have been calculated. The values of epsilon, epsilon and tan were decreased with frequency increment for each applied bias. The decrement at epsilon and epsilon by frequency increase indicated that the interfacial dipoles have not enough time to orient themselves in the alternate field direction. While the M value increase with frequency and reach a maximum, M displays a peak where its position shifts to higher frequency with increasing applied bias. The ln(sigma(ac)) vs ln() plot of the structure at 6V has two linear regions with different slopes. Such behavior of ln(sigma(ac)) vs ln() plot reveals that there are two distinct conduction mechanisms in the Al/(0.07Zn-doped PVA)/p-Si MPS type SBDs at room temperature.eninfo:eu-repo/semantics/closedAccessConductivityDiodesArticle10.1007/s10854-018-0146-22-s2.0-850561136072014523Q22014129WOS:000448831000061Q2