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    STUDY OF THE EFFECT OF SOME TYPES OF NUCLEAR RADIATION ON SOME PHYSICAL PROPERTIES OF THE TIN OXIDE FILM
    (2024-02) Al-Badri, Abdulrahman Faaiq Dawood
    In this research, thin films of pure tin oxide (SnO2) prepared by the thermal evaporation method in a vacuum. We used this method because it is one of the best ways to obtain pure, thin films free of impurities, as the purity rate reached 99% and the impurity percentage was 1 %. Some of these thin films were studied without irradiation, the other was irradiated with gamma rays emitted from cobalt-60 (3.14 and 6.24 rad), and with (thermal and fast) neutrons emitted by 241Am-9Be source 3.05×10^10,6.09×10^10 ""rad"". The optical properties of these films studied using an ultraviolet device absorbance, transmittance, absorption coefficient, and energy gap before and after irradiation. The results showed that the absorption shift of thin film irradiated for 7 days is less than 14 days, and the behavior is the same as that of non-irradiated thin film. Measurements of transmittance in the wavelength range from 190 to 1100 nm done for all non-irradiated and irradiated films. The results of transmittance increase with a quasi-stable gradient starting from a wavelength of 191 nm This behavior is identical to the behavior of the transmittance curve in the transparent conductive oxide aggregate, where the transmittance increases rapidly at the cutting-edge region, which confirms the energy gap thin films are of direct type. Absorbance has the inverse behavior as for the transparent. The absorbance increases for the non-irradiated thin film, reaching its peak at 315 nm and then decreasing afterward. As for the thin film irradiated with gamma, it reduces the absorbance of the thin film, as for the thin film irradiated with neutrons, there was an increase in absorbance. The energy gap is a slight difference between the irradiated and non-irradiated thin films, as after irradiation the energy gap of the thin film decreased. As for reflectivity, it has the same properties as absorption the electrical properties of the thin film studied by getting the relationship between current and voltage, which is an almost ohmic relationship for the film without irradiation. When the thin film was irradiated, the thin films were very affected, as we find that the breakdown voltage (large response) at voltages ranging between 410 – 988 V for all films, and the films irradiated with thermal neutrons get the most effect, and some of them showed low response. The structural properties showed by the XRD results of the non-irradiated film growth of four crystalline directions, of which 101 were prevalent. This corresponds to the global ASTM examination card. When the irradiation increases (gamma or neutrons), the peaks disappear because of the transformation of the matter from polycrystalline to non-crystalline.