Yazar "Azizian-Kalandaragh, Yashar" seçeneğine göre listele

Listeleniyor 1 - 3 / 3
  • Küçük Resim Yok
    Öğe
    The effects of (Bi2Te3-Bi2O3-TeO2-PVP) interfacial film on the dielectric and electrical features of Al/p-Si (MS) Schottky barrier diodes (SBDs)
    (Elsevier, 2020) Altindal, Semsettin; Farazin, Javid; Pirgholi-Givi, Gholamreza; Maril, Elif; Azizian-Kalandaragh, Yashar
    The influence of the inorganic/organic interfacial layer on the electric and dielectric performance of both Al/p-Si (MS) and Al/(Bi2Te3- Bi2O3- TeO2- PVP)/p-Si (MPS) type SBDs have been investigated. The material for the interfacial layer has been synthesized by the ultrasound-assisted method. FE-SEM, XRD, EDS, and UV-Vis techniques have been used for structural and optical characteristics of the prepared sample. The main electrical, dielectric, and electrical modulus parameters of these SBDs were obtained from the I-V and impedance spectroscopy measurements and using different calculation methods. The surface states (N-ss) have been calculated. The real and imaginary components of the permittivity (epsilon* = epsilon'-j epsilon ''), complex modulus (M* = M' +jM ''), dielectric loss tangent, and conductivity (sigma(ac)) values were also calculated from the (C/G-f) measurements in the wide range of frequency(100Hz-1MHz). We observed that (Bi2Te3-Bi2O3-TeO2-PVP) interlayer may be a good alternative to the low-dielectric insulator prepared by traditional methods.
  • Küçük Resim Yok
    Öğe
    Evaluation of gamma-irradiation effects on the electrical properties of Al/(ZnO-PVA)/p-Si type Schottky diodes using current-voltage measurements
    (Pergamon-Elsevier Science Ltd, 2021) Kaymaz, Ahmet; Baydilli, Esra Evcin; Tecimer, Habibe Uslu; Altindal, Semsettin; Azizian-Kalandaragh, Yashar
    In this study, Al/(ZnO-PVA)/p-Si (MPS) type Schottky diodes (SDs) were produced and the radiation effects on their electrical properties were investigated using the current-voltage (I?V) measurements. The I?V measurements were performed before irradiation and after various irradiation doses in the wide voltage range (?4 V) at room temperature. To determine gamma-irradiation effects on the MPS-type SDs accurately, one SD was preferred as a sample, and its significant electrical parameters such as zero-bias barrier height (?B0), ideality factor (n), and reverse-saturation-current (I0) were calculated using the linear parts of the ln(I)?V characteristics. Besides, to observe the effects of gamma-rays on MPS-type SDs in different voltage regions, some diode parameters were obtained by different calculation methods such as Cheung and Norde functions as well as Thermionic Emission (TE) theory. The calculations showed that high doses of gamma-irradiation (>5 kGy) caused the annealing effect, which leads to an improvement in some electrical parameters of SD, especially in the high electric field region. On the other hand, the energy distribution of the surface states (Nss) was obtained by utilizing the voltage-dependent ideality factor and the effective barrier height, with and without considering the series resistance (Rs) effect. It was observed that Nss values decreased almost as exponentially from the mid-band gap of the semiconductor towards the upper edge of the valance-band. Also, the density of surface states decreased with increasing radiation doses. As a result, almost all diode parameters are affected by irradiation. However, no significant defect has been detected that would affect the stable operation of the diode. Hence, Al/ (ZnO-PVA)/p-Si type SD can be used as an MPS-type detector instead of MIS/MOS-type detectors due to some advantages of the organic/polymer interlayer such as being cheap, light per molecule, flexible and requiring low energy consumption.
  • Küçük Resim Yok
    Öğe
    The photoresponse behavior of a Schottky structure with a transition metal oxide-doped organic polymer (RuO2:PVC) interface
    (Springer, 2024) Elamen, Hasan; Badali, Yosef; Ulusoy, Murat; Azizian-Kalandaragh, Yashar; Altindal, Semsettin; Gueneser, Muhammet Tahir
    The RuO2-doped organic polymer composite structure was used as the interface to study the photodiode properties of a Schottky structure. Some basic electrical and optoelectrical parameters of the structure interlaid with RuO2:PVC were investigated using the I-V characteristics in the dark and under definite illuminations. The values of saturation current (I-0), barrier height (phi(B0)) at zero-bias, ideality factor (n), series and shunt resistances (R-s and R-sh) were calculated by using different methods such as thermionic emission, Ohm's law, Cheung and Norde functions. They were found to be intensely depend on illumination levels and voltage. Forward bias I-V data were used to obtain energy-dependent profiles of interface-states (N-ss) for each illumination level. Moreover, the open-circuit voltage (V-oc), short circuit current (I-sc), filling factor (FF), and efficiency (eta) of the fabricated Schottky structure were found as 0.118 V, 6.4 mu A, 46%, and 0.088% under 50 mW/cm(-2), respectively. According to the findings, the RuO2:PVC organic interlayer is light-sensitive and can thus be used in optoelectronic applications, such as photodetectors and photodiodes.[Graphic]