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    Comparative Investigation on the Effects of Organic and Inorganic Interlayers in Au/n-GaAs Schottky Diodes
    (Ieee-Inst Electrical Electronics Engineers Inc, 2017) Tan, Serhat Orkun; Tecimer, Huseyin; Cicek, Osman
    There have been many attempts on Schottky barrier diodes (SBDs) to improve the quality of metal-semiconductor (MS) structure and control permanently the barrier height (BH) by utilizing an organic or inorganic interfacial layer instead of widely used SiO2. The organic polymer or inorganic insulator interfacial layer insertion to the M/S interface converts the structure into the metal-polymer-semiconductor (MPS) or metal-insulator-semiconductor (MIS). The reliability and performance of the MIS/MPS-type SBDs is drastically affected by the interface layer quality and also its thickness. In this paper, MS structure forms as Au/n-GaAs are consecutively used with an organic interfacial layer polyvinyl alcohol and inorganic interfacial layer zinc oxide to compare their effects on the electrical characteristics of SBDsunder distinct illumination levels. Consequently, the current-voltage characteristics provide us to reveal and compare the improvement and reliabilityof the MPS and MIS-type SBDs by also considering significant electrical parameters, such as ideality factor, apparent BH, and series resistance.
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    Dielectric properties, electric modulus and conductivity profiles of Al/Al2O3/p-Si type MOS capacitor in large frequency and bias interval
    (Elsevier - Division Reed Elsevier India Pvt Ltd, 2022) Tan, Serhat Orkun; Cicek, Osman; Turk, Cagri Gokhan; Altindal, Semsettin
    The letter reports that the impedance spectroscopy method has been performed to acquire impeccable results on the ac electric conductivity (sigma(ac)) dielectric (epsilon' and epsilon '') and electric modulus (M' and M '') components of the Al/Al2O3/p-Si type MOS capacitor. The relevant parameters are defined with C-V-f and G/omega-V-f data between 1 kHz and 5 MHz and +/- 3 V at room temperature. Both parts of dielectric constants are decreasing at high frequencies to prevent the interface dipoles from gaining enough time to return to the alternative area. Depending on the restructuring and reorganization of surface states (N-ss) in the alternative field, tan delta decreases at higher frequencies. The M' values reach maximum by frequency increment in the depletion region, while M '' values shift to the forward biases depending on a certain density distribution of N-ss. The sigma(ac) values increase with increasing frequency in the accumulation region depending on series resistance. Considering polarization processes, surface conditions (N-ss) and Al2O3 interlayer, frequency and biases are extremely effective and dependent on the dielectric specifications, electrical modulus and conductivity. (C) 2021 Karabuk University. Publishing services by Elsevier B.V.
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    Role of Graphene-Doped Organic/Polymer Nanocomposites on the Electronic Properties of Schottky Junction Structures for Photocell Applications
    (Springer, 2018) Cicek, Osman; Tan, Serhat O.; Tecimer, Hueseyin; Altindal, Semsettin
    In this study, the current-voltage characteristics of non-doped and distinct graphene (Gr)-doped polyvinyl alcohol (PVA) interlayers in metal/organic polymer semiconductor type Schottky junction structures (SJSs) were investigated on both forward and reverse biases under distinct levels of illumination. The distinct doping concentration ratios (1%, 3% and 7%) of the Gr added to the PVA interlayers were compared by taking into account the basic electrical parameters, such as saturation current (I-o), ideality factor (n), barrier height (phi(Bo)), series (R-s) and shunt resistance (R-sh). The 7% Gr-doped structure displayed the lowest I-o values at zero bias. Moreover, the results indicated that the 7% Gr-doped PVA decreased the n value but increased the phi(Bo) value compared with values associated with structures that have different doping concentrations. In terms of quality and reliability, the R-s and R-sh values of the SJSs were obtained using Ohm's law and Cheung's functions, and the 7% Gr-doped structure eventually displayed more uniformly distributed and lower R-s values and the highest R-sh values. Consequently, the 7% Gr-doped structure had better overall quality because of its superior electrical properties compared with structures that have other doping concentrations. Therefore, the 7% Gr-doped structure can be used as a photodiode in electronic devices.