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    Frequency dependent electrical and dielectric properties of the Au/(RuO2: PVC)/n-Si (MPS) structures
    (Elsevier, 2023) Guneser, Muhammet Tahir; Elamen, Hasan; Badali, Yosef; Altindal, Semsettin
    In this study, the electrical and dielectric characteristics of the Au/(RuO2:PVC)/n-Si structures were analyzed using the impedance spectroscopy method, including capacitance/conductance (C - G/omega) measurements in wide voltage and frequency ranges (+4 V, 5 kHz - 5 MHz) at room temperature. The main electrical parameters such as concentration of donor atoms (N-D), diffusion potential (V-D), depletion layer thickness (W-D), Fermi energy level (E-F), barrier height (phi(B)), and maximum electric field (E-m) were extracted for each measured frequency. The phi(B), W-D, and E-F values are increasing with increased frequency, while N-D and E-m exponentially decrease. The surfacestates (N-SS) were evaluated using the low-high-frequency capacitance technique. Furthermore, the basic dielectric parameters such as tangent-loss (tan delta), electrical conductivity (sigma(ac)), real and imaginary parts of epsilon*, electric-modulus (M*), and complex impedance (Z*) were investigated. The obtained results indicate that the N-SS, and RuO2:PVC organic interlayer are more effective on C and G/omega measurements.
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    The photoresponse behavior of a Schottky structure with a transition metal oxide-doped organic polymer (RuO2:PVC) interface
    (Springer, 2024) Elamen, Hasan; Badali, Yosef; Ulusoy, Murat; Azizian-Kalandaragh, Yashar; Altindal, Semsettin; Gueneser, Muhammet Tahir
    The RuO2-doped organic polymer composite structure was used as the interface to study the photodiode properties of a Schottky structure. Some basic electrical and optoelectrical parameters of the structure interlaid with RuO2:PVC were investigated using the I-V characteristics in the dark and under definite illuminations. The values of saturation current (I-0), barrier height (phi(B0)) at zero-bias, ideality factor (n), series and shunt resistances (R-s and R-sh) were calculated by using different methods such as thermionic emission, Ohm's law, Cheung and Norde functions. They were found to be intensely depend on illumination levels and voltage. Forward bias I-V data were used to obtain energy-dependent profiles of interface-states (N-ss) for each illumination level. Moreover, the open-circuit voltage (V-oc), short circuit current (I-sc), filling factor (FF), and efficiency (eta) of the fabricated Schottky structure were found as 0.118 V, 6.4 mu A, 46%, and 0.088% under 50 mW/cm(-2), respectively. According to the findings, the RuO2:PVC organic interlayer is light-sensitive and can thus be used in optoelectronic applications, such as photodetectors and photodiodes.[Graphic]
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    The possible current-conduction mechanism in the Au/(CoSO4-PVP)/n-Si junctions
    (Springer, 2020) Elamen, Hasan; Badali, Yosef; Guneser, Muhammet Tahir; Altindal, Semsettin
    The possible current-conduction mechanism (CCMs) of the Au/CoSO4-PVP/n-Si junctions was investigated using temperature-dependence current-voltage (I-V) experiments over 100-360 K. The experimental results showed that the value of BH increases approximately linearly with increasing temperature. Such positive temperature coefficient (alpha = Delta phi(B0)/Delta T) is in agreement with the reported negative temperature coefficient of the bandgap of Si (= - 0.473 meV/K). The (n(ap)(-1)-1) vsq/2kT curves have different characters in two temperature ranges due to having separate two barrier distributions. The rho(2)and rho(3)values obtained from intercept and slope of these curves as 0.521 V and 0.011 V for 240-360 K temperature range and 0.737 V and 0.004 V for the 100-220 K range. This results show that the high temperature region with smaller rho(2)and larger rho(3)voltage deformation coefficients has a wider and greater of the barrier height distribution than the second region. As an evidence for the Gaussian distribution, the phi(B0)and standard deviation (sigma(0)) were derived from the intercept and slope of the phi(B0)-q/2kT curves as 1.14 eV and 0.163 V at high temperatures and 0.62 eV and 0.088 V at low temperatures. The Richardson constant obtained as 102 A/cm(2)K(2)for 240-360 K temperature range using standard deviation value which is similar to the theoretical Richardson constant value of silicon (112 A/cm(2)K(2)). For each temperature, the profile ofN(ss)vs (E-c-E-ss) was provided using the voltage-dependent effective barrier height (phi(e)) value. It was observed that these surface conditions decreased with increasing temperature.