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    PRODUCTION AND EVALUATION OF CONDUCTION MECHANISMS OF THE AU/(RUO2:PVC)/N-SI (MPS) STRUCTURES IN A WIDE RANGE OF ILLUMINATION AND FREQUENCY USING CURRENT-VOLTAGE AND IMPEDANCE-VOLTAGE MEASUREMENTS
    (2023-07) Elamen, Hasan Meloud M
    In this study, the RuO2-doped PVC composite structures were produced and used as an interfacial layer in the Au/n-Si (MS) Schottky structures to improve their photo response, electric and dielectric performance. The basic photovoltaic, electric, and dielectric factors of the fabricated Au/(RuO2:PVC)/n-Si (MPS) structure were analyzed from the I-V characteristics under various illumination levels and the impedance spectroscopy method, including capacitance/conductance (C and G/?) data in wide ranges of voltage and frequency at room temperature in the dark. The ideality factor (n), zero bias barrier height (?B0), inverse saturation current (Io), and both series and shunt resistances (RS and RSh) were evaluated using the I?V data in the dark and definite illumination intensities. Also, the values of n, ?B, and RS were obtained and compared with each other using Cheung and Norde functions. The energy distribution profile of interface states (NSS) were also extracted (NSS vs (EC - ESS)) with considering the voltage-dependent of ideality factor (n(V)) and zero barrier height (?B0 (V)). In addition, the photocurrent (IPh), photosensitivity (SPh), and photo-response (R) were calculated under various illumination intensities. The value of photocurrent in the reverse bias (IPh) increases with illumination intensity due to the creation of hole-electron pairs at the junction and their drifting in opposite directions. Also, the short circuit current (ISC), open circuit voltage (VOC), fill factor (FF), and efficiency (?) of the produced structure were obtained and found to be 6.4?A, 0.118 V, 46%, and 0.088 % at 50mW/cm2. In addition, the capacitance/conductance (C-V-f and G/?-V-f) data at room temperature in the dark were used to analyze the main electric and dielectric parameters. The depletion layer width (WD), barrier height (?B(C-V)), the fermi energy level (EF), and the density of donor atoms (ND) were calculated using the reverse bias of C-2- V plot. Voltage-dependent profiles of the interface states (NSS) were also analyzed from the high-low frequency capacitance techniques (CHF-CLF). Finally, both the real and imaginary elements of the complex permittivity (?? and ??), tangent loss (tan ?), ac electrical conductivity (?ac), complex electric-modulus (M*), and complex impedance (Z*) were obtained by from C- V-f and G/?-V-f measurements. The obtained higher values of ?? and ?? at low frequencies wear attributed to the existence of dipole polarizations and NSS. According to these results, the organic interlayer (RuO2:PVC) has improved the photo response, electric and dielectric performance of the fabricated structures, and the structures are sensitive to illumination, frequency, and voltage. Therefore, the produced device can be used in electronic applications, such as photodiodes and photodetectors, and as a capacitor instead of a conventional MIS type structure.