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Comparative study of the effect of different interlayer thicknesses on frequency dependent electric modulus and conductivity in Au/n-Si structures
(Elsevier Science Sa, 2021) Arslan, Bilal; Tan, Serhat Orkun; Orak, Ikram; Tecimer, Habibe Uslu
Frequency dependent capacitance (C) and conductance (G/omega) data for Au/n-Si structures fabricated at room temperature without interlayers and with 5 nm and 10 nm aluminium-oxide (Al2O3) interlayer thicknesses are investigated. The Al2O3 interlayers were deposited by atomic layer deposition. Data on the complex electric modulus (M*) and alternating current electrical conductivity (sigma(ac)) values are acquired for the three structures in the 3 kHz-3 MHz frequency range between (-3 V) - (+5 V) bias interval and compared. It was observed that the C and G/omega values decreased with the increase in frequency and interlayer thickness and that the frequency increases as a result of polarization which also increases M*, especially in 5 nm and 10 nm interlayered structures. Frequency and interlayer thickness increment have a positive impact by increasing sigma(ac), while conductivity has been shown to be highly sensitive to the presence of an interlayer and to its thickness.