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    Determination of temperature sensitivity and current-transport mechanisms of the GaAs-based MS contact
    (Elsevier, 2023) Kaymaz, Ahmet; Baydilli, Esra Evcin; Tecimer, Hueseyin; Tecimer, Habibe Uslu; Altindal, Semsettin
    In this study, the GaAs-based metal-semiconductor (MS) contact was prepared as a reference sample for com-parison with other devices in the literature, especially some interfacial layered Schottky structures and tem-perature sensors. The study also includes investigating and evaluating essential device parameters for determining current-transport mechanisms (CTMs) and temperature-sensing behavior. In fact, the benefits of the insulator/organic interfacial layer in devices, such as controlling charge transfers and preventing diffusion at the MS interface, have been mentioned a lot in the literature. However, since the production processes of the MS contact are easier and less costly than interfacial-layered devices, it would be more logical/suitable to prefer it in applications where this device may be sufficient, especially as a temperature sensor. Therefore, the current-voltage (I-V) data of the produced MS contact was obtained in a wide temperature range to determine the CTMs, and it was observed that two linear areas with different slopes, known as the two-parallel diode model, existed in the GaAs-based MS contact. Therefore, essential contact parameters and graphs were obtained for both two regions, and it was obtained that quantum mechanical tunneling mechanisms, the T0 effect, and the Double Gaussian Distribution (DGD) with Thermionic Emission theory play a role as CTMs of the GaAs-based MS contact such as some interfacial layered devices given in the literature. On the other hand, the temperature sensitivity of the MS contact was examined, and it was observed that the sensitivity parameter values exhibit an excellent quality sensing behavior compared to other devices in the literature, including devices with high-temperature sensitivity. Therefore, it can be preferred as a temperature sensor in many applications due to its low cost and easy production processes.
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    Role of Graphene-Doped Organic/Polymer Nanocomposites on the Electronic Properties of Schottky Junction Structures for Photocell Applications
    (Springer, 2018) Cicek, Osman; Tan, Serhat O.; Tecimer, Hueseyin; Altindal, Semsettin
    In this study, the current-voltage characteristics of non-doped and distinct graphene (Gr)-doped polyvinyl alcohol (PVA) interlayers in metal/organic polymer semiconductor type Schottky junction structures (SJSs) were investigated on both forward and reverse biases under distinct levels of illumination. The distinct doping concentration ratios (1%, 3% and 7%) of the Gr added to the PVA interlayers were compared by taking into account the basic electrical parameters, such as saturation current (I-o), ideality factor (n), barrier height (phi(Bo)), series (R-s) and shunt resistance (R-sh). The 7% Gr-doped structure displayed the lowest I-o values at zero bias. Moreover, the results indicated that the 7% Gr-doped PVA decreased the n value but increased the phi(Bo) value compared with values associated with structures that have different doping concentrations. In terms of quality and reliability, the R-s and R-sh values of the SJSs were obtained using Ohm's law and Cheung's functions, and the 7% Gr-doped structure eventually displayed more uniformly distributed and lower R-s values and the highest R-sh values. Consequently, the 7% Gr-doped structure had better overall quality because of its superior electrical properties compared with structures that have other doping concentrations. Therefore, the 7% Gr-doped structure can be used as a photodiode in electronic devices.