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    Illumination Dependent Electrical Data Identification of the CdZnO Interlayered Metal-Semiconductor Structures
    (Springer, 2020) Tan, S. O.; Tascioglu, I.; Altindal Yeriskin, S.; Tecimer, H.; Yakuphanoglu, F.
    Electrical data of the Schottky structure with CdZnO interlayer have been evaluated for different illumination intensities. Considering such parameters as, the ideality factor (n), reverse saturation current (I-o), zero bias barrier height (phi(Bo)), series and shunt resistances (R-s and R-sh) and surface states (N-ss), we concluded that these parameters extremely depend on the illumination power and applied bias voltage. In consequence of the Ohm's law and Norde's method used for R-s determination, the R-s values decreased with increasing illumination intensity. The energy distribution of the N-ss and voltage dependent profile of resistance (R-i) of the structure were extracted from the forward bias current-voltage (I-V) data. The fabricated CdZnO interlayered metal-semiconductor structure appears to have photodiode behavior. Accordingly, the alteration in the basic electrical parameters by the increment in illumination levels indicates that, the carrier generation takes place in the depletion layer and the conductivity of the CdZnO interlayered structure is improved.
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    On the frequency and voltage dependence of admittance characteristics of Al/PTCDA/P-Si (MPS) type Schottky barrier diodes (SBDs)
    (Elsevier Sci Ltd, 2014) Tecimer, H.; Uslu, H.; Alahmed, Z. A.; Yakuphanoglu, F.; Altindal, S.
    The admittance measurements which are including capacitance/conductance-voltage-frequency (C-V-f and G/omega-V-f) measurements of the Al/PTCDA/p-Si (MPS) type Schottky barrier diodes (SBDs) were investigated in the frequency and voltage range of 10 kHz-1 MHz and (-3 V) to (3 V) at room temperature. C and G/omega values were found as strong functions of frequency especially in depletion and accumulation regions due to the effect of interface states (N-ss) and series resistance (R-s), respectively. The main electrical parameters such as doping concentration atoms (N-A), diffusion potential (V-d), Fermi energy level (E-F) and barrier height (Phi(B)(C-V)) values were obtained from the reverse bias C-2 VS V plots for each frequency. The voltage dependent resistivity (R-i) profile was also obtained from the C-i and G(i) data and they exhibit an anomalous peak in the depletion region due to particular distribution of N-ss at polymer (PTCDA)/Si interface. In addition, the energy density distribution profile of N-ss and their relaxation time (tau) were obtained from the measured C-f and G/omega similar to f characteristics for various forward bias voltages and they were ranged from 3.06 x 10(12) eV(-1) cm(-2) to 3.29 x 10(12) eV(-1) cm(-2) and 6.20 mu s to 8.41 mu s, respectively, in the energy range of E-v-0.479 and E-v-0.501 eV, respectively. These results confirmed that the value of N-ss may be passivized by PTCDA interfacial layer and such low value of N-ss is very suitable for the fabrication MPS type SBDs in the electronic industry. (C) 2013 Elsevier Ltd. All rights reserved.