An informetric view to the negative capacitance phenomenon at interlayered metal-semiconductor structures and distinct electronic devices
Küçük Resim Yok
Tarih
2023
Dergi Başlığı
Dergi ISSN
Cilt Başlığı
Yayıncı
Erişim Hakkı
info:eu-repo/semantics/openAccess
Özet
Negative Capacitance (NC) phenomenon, which can be explained as the material exhibiting an inductive behavior, is often referred to as \"anomalous\" or \"abnormal\" in the literature. Especially in the forward bias/deposition region, the presence of surface states (Nss) and their relaxation times (?), series resistance (Rs), minority carrier injection, interface charge loss in occupied states under the Fermi energy level, parasitic inductance, or poor measuring equipment calibration problems can be counted among the causes of this phenomenon. Studies on NC behavior have shown that this behavior can be observed for different frequencies, temperatures, and related parameters at forward biases. However, the NC behavior, which appears as an unidentified peak in admittance spectroscopy data, is not yet fully understood. Ultimately, this study aims to compile and analyze the NC reported in selected scientific studies, investigate the source of this phenomenon, and observe statistics in a general view.
Açıklama
Anahtar Kelimeler
Kaynak
Gazi University Journal of Science Part A: Engineering and Innovation
WoS Q Değeri
Scopus Q Değeri
Cilt
10
Sayı
4
