Impedance response and phase angle determination of metal-semiconductor structure with n-doped diamond like carbon interlayer

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dc.contributor.authorUrgun, Nuray
dc.contributor.authorVahıd, Aylar Feızollahı
dc.contributor.authorAlsmael, Jaafar Abdulkareem Mustafa
dc.contributor.authorAvar, Barış
dc.contributor.authorTan, Serhat Orkun
dc.date.accessioned2024-09-29T16:32:05Z
dc.date.available2024-09-29T16:32:05Z
dc.date.issued2024
dc.departmentKarabük Üniversitesien_US
dc.description.abstractWith their superior properties over p-n barriers, Schottky Barrier Diodes have a wide usage area, especially as a test tool to produce better-performance devices. The main performance parameter of these devices is measured by their conduction, which can develop with an interlayer addition through the sandwich design. Regarding the DLC, which also has outstanding specifications under thermal, chemical, and physical conditions, is a good candidate for interlayer tailoring, specifically when used with doping atoms. Thus, this study investigates the impedance response of the fabricated device with an N-doped DLC interlayer by employing the electrochemical technique as a combination of electrolysis, RF magnetron sputtering, and thermal evaporation. The measurements were conducted for broad scales of voltage and frequency corresponding between (-3V) and (+4V) and 1kHz and 1MHz, respectively. According to the impedance analysis, complex impedance decreases by rising bias and frequency, from 1.8 M? to 2 k ? at 1MHZ due to the additional insulating layer. At the same time, the phase angle indicates the quality of the dielectric layer with an average of 81.36 ? for the sample logarithmic frequency values with an almost constant-like trend in the inversion stage. In comparison, it reduces to an average of 30.25 ? after the depletion stage by showing the rising conductivity. Moreover, it has some unexpected rising values at the strong accumulation stage, possibly due to the deposited thin film's unique structure. The supported results by phase angle changes, showing frequency-adjustable working conditions, may offer that selective electrical conduction can be tuned.en_US
dc.identifier.doi10.54287/gujsa.1393292
dc.identifier.endpage23en_US
dc.identifier.issue1en_US
dc.identifier.startpage12en_US
dc.identifier.trdizinid1230427en_US
dc.identifier.urihttps://doi.org/10.54287/gujsa.1393292
dc.identifier.urihttps://search.trdizin.gov.tr/tr/yayin/detay/1230427
dc.identifier.urihttps://hdl.handle.net/20.500.14619/11335
dc.identifier.volume11en_US
dc.indekslendigikaynakTR-Dizinen_US
dc.language.isoenen_US
dc.relation.ispartofGazi University Journal of Science Part A: Engineering and Innovationen_US
dc.relation.publicationcategoryMakale - Ulusal Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/openAccessen_US
dc.titleImpedance response and phase angle determination of metal-semiconductor structure with n-doped diamond like carbon interlayeren_US
dc.typeArticleen_US

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