Effectuality of the frequency levels on the c&g/?–v data of the polymer interlayered metal-semiconductor structure

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dc.contributor.authorAlsmael, Jaafar
dc.contributor.authorUrgun, Nuray
dc.contributor.authorTan, Serhat Orkun
dc.contributor.authorTecımer, Habibe Uslu
dc.date.accessioned2024-09-29T16:32:05Z
dc.date.available2024-09-29T16:32:05Z
dc.date.issued2022
dc.departmentKarabük Üniversitesien_US
dc.description.abstractVoltage and frequency dependent of capacitance and conductivity versus voltage (C&G/?–V) qualifications of Al/(ZnFe2O4-PVA)/p-Si structure was compared and examined at lower and higher frequencies as 10 kHz and 1 MHz, respectively. The negative capacitance (NC) is a phenomenon that occurs at low frequencies and is primarily caused by minority carrier injection, series resistance (Rs), and surface states (Nss). Because of the specific density distribution and relaxation times of Nss, NC acts different behavior at lower and higher frequency levels and loses its effectiveness with increasing frequency. Also, the fluctuations in C and G/? were ascribed to doping concentration, surface states loss charges, and interlayer thickness. Nss was acquired using the low-high frequency capacitance method (CLF-CHF), and the forward biased C?2 vs V graphs (at 10 kHz to 1 MHz) were used to determine the Fermi level (EF), barrier height (?B), and concentration of doped acceptor atoms (NA). Accordingly, it has been detected that C and G/? are highly dependence on biases and frequencies. Then again, the polarizations and surface states effect are barely perceptible at extremely higher frequency levels. Thus, polarization and Rs stand out as important parameters that should be taken into account when examining the basic parameters of electronic devices.en_US
dc.identifier.doi10.54287/gujsa.1206332
dc.identifier.endpage561en_US
dc.identifier.issue4en_US
dc.identifier.startpage554en_US
dc.identifier.trdizinid1149056en_US
dc.identifier.urihttps://doi.org/10.54287/gujsa.1206332
dc.identifier.urihttps://search.trdizin.gov.tr/tr/yayin/detay/1149056
dc.identifier.urihttps://hdl.handle.net/20.500.14619/11333
dc.identifier.volume9en_US
dc.indekslendigikaynakTR-Dizinen_US
dc.language.isoenen_US
dc.relation.ispartofGazi University Journal of Science Part A: Engineering and Innovationen_US
dc.relation.publicationcategoryMakale - Ulusal Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/openAccessen_US
dc.titleEffectuality of the frequency levels on the c&g/?–v data of the polymer interlayered metal-semiconductor structureen_US
dc.typeArticleen_US

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