Yazar "Tecimer, Huseyin" seçeneğine göre listele

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    Comparative Investigation on the Effects of Organic and Inorganic Interlayers in Au/n-GaAs Schottky Diodes
    (Ieee-Inst Electrical Electronics Engineers Inc, 2017) Tan, Serhat Orkun; Tecimer, Huseyin; Cicek, Osman
    There have been many attempts on Schottky barrier diodes (SBDs) to improve the quality of metal-semiconductor (MS) structure and control permanently the barrier height (BH) by utilizing an organic or inorganic interfacial layer instead of widely used SiO2. The organic polymer or inorganic insulator interfacial layer insertion to the M/S interface converts the structure into the metal-polymer-semiconductor (MPS) or metal-insulator-semiconductor (MIS). The reliability and performance of the MIS/MPS-type SBDs is drastically affected by the interface layer quality and also its thickness. In this paper, MS structure forms as Au/n-GaAs are consecutively used with an organic interfacial layer polyvinyl alcohol and inorganic interfacial layer zinc oxide to compare their effects on the electrical characteristics of SBDsunder distinct illumination levels. Consequently, the current-voltage characteristics provide us to reveal and compare the improvement and reliabilityof the MPS and MIS-type SBDs by also considering significant electrical parameters, such as ideality factor, apparent BH, and series resistance.
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    Comparison of dielectric characteristics for metal-semiconductor structures fabricated with different interlayers thicknesses
    (Springer, 2021) Arslan, Bilal; Tan, Serhat Orkun; Tecimer, Huseyin; Altindal, Semsettin
    The dielectric properties of MS structures without interlayer and with Al2O3 interlayer have been investigated in a wide frequency range under forward and reverse biases. In this context, parameters such as loss tangent (tan delta), dielectric constant (epsilon '), dielectric loss (epsilon '') were calculated from the capacitance and conductivity data. The observed changes in dielectric parameters have been attributed to the coupling mechanisms between charges placed at the interface states, surface and bipolar polarization, and traps. The experimental results clearly indicate that the values of epsilon ', epsilon '' and tan delta vary significantly with frequency and voltage. That is, the thickness of the interlayer changes considerably the dielectric properties of the structure. As a result, it has been revealed that the desired device properties can be achieved by varying the thickness of the interlayers.
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    Frequency-Dependent Admittance Analysis of the Metal-Semiconductor Structure With an Interlayer of Zn-Doped Organic Polymer Nanocomposites
    (Ieee-Inst Electrical Electronics Engineers Inc, 2018) Tecimer, Huseyin; Tan, Serhat Orkun; Altindal, Semsettin
    The capacitance-voltage (C-V) and conductance-voltage (G/omega-V) data for Al/(0.07Zn-doped polyvinyl alcohol)/p-Si structure have been performed (at +/- 6-V biases) in a frequency interval of 1-400 kHz at room temperature. Utilizing form conductance method, N-ss values were specified from admittance measurements. The reason of higher C and G values obtained at lower frequencies was ascribed to the surface states located atMS interface and insulator layer. The increment at capacitance and conductance was occurred in consequence of the ac signal that followed easily by the surface states at these lower frequencies. The surface states existence also generates peaks at conductance versus logarithm of frequency (Gp/omega-log(f)) plots under distinct voltage values. The acquired values of Nss and relaxation time (tau) are in the interval of 1.94 x 10(14)-1.67 x 10(14) eV(-1).cm(-2) and 2.81 x 10(-3)-1.30 x 10(-5) s, respectively.
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    On the frequency-voltage dependent electrical and dielectric profiles of the Al/(Zn-PVA)/p-Si structures
    (Springer, 2018) Tecimer, Huseyin
    The frequency effect on the dielectric features of Zn doped polymer interlayered metal-semiconductor (MS) structure has been investigated by admittance measuring methods. As a function of frequency and voltage, the parameters such as dielectric constant (epsilon), dielectric loss (epsilon), dielectric loss tangent (tan), and ac electrical conductivity (sigma(ac)) have been calculated. The values of epsilon, epsilon and tan were decreased with frequency increment for each applied bias. The decrement at epsilon and epsilon by frequency increase indicated that the interfacial dipoles have not enough time to orient themselves in the alternate field direction. While the M value increase with frequency and reach a maximum, M displays a peak where its position shifts to higher frequency with increasing applied bias. The ln(sigma(ac)) vs ln() plot of the structure at 6V has two linear regions with different slopes. Such behavior of ln(sigma(ac)) vs ln() plot reveals that there are two distinct conduction mechanisms in the Al/(0.07Zn-doped PVA)/p-Si MPS type SBDs at room temperature.