On the frequency-voltage dependent electrical and dielectric profiles of the Al/(Zn-PVA)/p-Si structures

Küçük Resim Yok

Tarih

2018

Dergi Başlığı

Dergi ISSN

Cilt Başlığı

Yayıncı

Springer

Erişim Hakkı

info:eu-repo/semantics/closedAccess

Özet

The frequency effect on the dielectric features of Zn doped polymer interlayered metal-semiconductor (MS) structure has been investigated by admittance measuring methods. As a function of frequency and voltage, the parameters such as dielectric constant (epsilon), dielectric loss (epsilon), dielectric loss tangent (tan), and ac electrical conductivity (sigma(ac)) have been calculated. The values of epsilon, epsilon and tan were decreased with frequency increment for each applied bias. The decrement at epsilon and epsilon by frequency increase indicated that the interfacial dipoles have not enough time to orient themselves in the alternate field direction. While the M value increase with frequency and reach a maximum, M displays a peak where its position shifts to higher frequency with increasing applied bias. The ln(sigma(ac)) vs ln() plot of the structure at 6V has two linear regions with different slopes. Such behavior of ln(sigma(ac)) vs ln() plot reveals that there are two distinct conduction mechanisms in the Al/(0.07Zn-doped PVA)/p-Si MPS type SBDs at room temperature.

Açıklama

Anahtar Kelimeler

Conductivity, Diodes

Kaynak

Journal of Materials Science-Materials in Electronics

WoS Q Değeri

Q2

Scopus Q Değeri

Q2

Cilt

29

Sayı

23

Künye