On the frequency-voltage dependent electrical and dielectric profiles of the Al/(Zn-PVA)/p-Si structures
Küçük Resim Yok
Tarih
2018
Yazarlar
Dergi Başlığı
Dergi ISSN
Cilt Başlığı
Yayıncı
Springer
Erişim Hakkı
info:eu-repo/semantics/closedAccess
Özet
The frequency effect on the dielectric features of Zn doped polymer interlayered metal-semiconductor (MS) structure has been investigated by admittance measuring methods. As a function of frequency and voltage, the parameters such as dielectric constant (epsilon), dielectric loss (epsilon), dielectric loss tangent (tan), and ac electrical conductivity (sigma(ac)) have been calculated. The values of epsilon, epsilon and tan were decreased with frequency increment for each applied bias. The decrement at epsilon and epsilon by frequency increase indicated that the interfacial dipoles have not enough time to orient themselves in the alternate field direction. While the M value increase with frequency and reach a maximum, M displays a peak where its position shifts to higher frequency with increasing applied bias. The ln(sigma(ac)) vs ln() plot of the structure at 6V has two linear regions with different slopes. Such behavior of ln(sigma(ac)) vs ln() plot reveals that there are two distinct conduction mechanisms in the Al/(0.07Zn-doped PVA)/p-Si MPS type SBDs at room temperature.
Açıklama
Anahtar Kelimeler
Conductivity, Diodes
Kaynak
Journal of Materials Science-Materials in Electronics
WoS Q Değeri
Q2
Scopus Q Değeri
Q2
Cilt
29
Sayı
23