Low temperature plasma production of hydrogenated nanocrystalline silicon thin films

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dc.contributor.authorAnutgan, Tamila
dc.contributor.authorUysal, Sema
dc.date.accessioned2024-09-29T15:55:05Z
dc.date.available2024-09-29T15:55:05Z
dc.date.issued2013
dc.departmentKarabük Üniversitesien_US
dc.description.abstractThe hydrogenated nanocrystalline silicon (nc-Si:H) thin films were produced by capacitively-coupled plasma enhanced chemical vapor deposition (PECVD) technique at low substrate temperatures (T-s approximate to 40-200 degrees C). Firstly, for particular growth parameters, the lowest stable T-s was determined to avoid temperature fluctuations during the film deposition. The influence of the T-s on the structural and optical properties of the films was investigated by the Fourier transform infrared (FTIR), UV-visible transmittance/reflectance and X-ray diffraction (XRD) spectroscopies. Also, the films deposited at the center of the PECVD electrode and those around the edge of the PECVD electrode were compared within each deposition cycle. The XRD and UV-visible reflectance analyses reveal the nanocrystalline phase for the films grown at the edge at all T-s and for the center films only at 200 degrees C. The crystallinity fraction and lateral dark conductivity decrease with lowered T-s. FTIR analyses were used to track the hydrogen content, void fraction and amorphous matrix volume fraction within the films. The optical constants obtained from the UV-visible transmittance spectroscopy were correlated well with the FTIR results. Finally, the optimal T-s was concluded for the application of the produced nc-Si: H in silicon-based thin film devices on plastic substrates. (C) 2012 Elsevier B.V. All rights reserved.en_US
dc.identifier.doi10.1016/j.cap.2012.07.001
dc.identifier.endpage188en_US
dc.identifier.issn1567-1739
dc.identifier.issn1878-1675
dc.identifier.issue1en_US
dc.identifier.scopus2-s2.0-84866127169en_US
dc.identifier.scopusqualityQ2en_US
dc.identifier.startpage181en_US
dc.identifier.urihttps://doi.org/10.1016/j.cap.2012.07.001
dc.identifier.urihttps://hdl.handle.net/20.500.14619/4457
dc.identifier.volume13en_US
dc.identifier.wosWOS:000308716900030en_US
dc.identifier.wosqualityQ2en_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.language.isoenen_US
dc.publisherElsevieren_US
dc.relation.ispartofCurrent Applied Physicsen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectHydrogenated nanocrystalline siliconen_US
dc.subjectPECVDen_US
dc.subjectLow substrate temperatureen_US
dc.subjectFTIRen_US
dc.subjectUV-visible spectroscopyen_US
dc.titleLow temperature plasma production of hydrogenated nanocrystalline silicon thin filmsen_US
dc.typeArticleen_US

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