Strain in BInGaN thin layers grown in nonpolar and semipolar directions

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dc.contributor.authorYildirim, Hasan
dc.date.accessioned2024-09-29T16:04:50Z
dc.date.available2024-09-29T16:04:50Z
dc.date.issued2022
dc.departmentKarabük Üniversitesien_US
dc.description.abstractStrain properties of BInGaN layers assumed to be grown on GaN, AlN and ZnO substrates in nonpolar and semipolar directions have been calculated. The strain components in the laboratory system have been presented as a function of boron and indium contents of the layer for each substrate. We have found that the in-plane strain components go up to approximate to 7, 10, and 6% in magnitude in the cases of GaN, AlN, and ZnO substrates, respectively. The piezeolectric properties of the BInGaN layers assumed to be grown in semipolar direction have been computed, and the outcomes for selected values of the boron content have been plotted against the indium content. Finally, the built-in electric field values inside the well layers of BInGaN/GaN and BInGaN/AlN quantum wells, considered to be grown in the semipolar direction, have been figured out. According to the results, the field in both types of the quantum wells reaches the values as high as approximate to 10 MVcm(-1) in magnitude.en_US
dc.identifier.doi10.1140/epjp/s13360-022-02925-y
dc.identifier.issn2190-5444
dc.identifier.issue6en_US
dc.identifier.scopus2-s2.0-85132102212en_US
dc.identifier.scopusqualityQ2en_US
dc.identifier.urihttps://doi.org/10.1140/epjp/s13360-022-02925-y
dc.identifier.urihttps://hdl.handle.net/20.500.14619/6326
dc.identifier.volume137en_US
dc.identifier.wosWOS:000812521800005en_US
dc.identifier.wosqualityQ2en_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.language.isoenen_US
dc.publisherSpringer Heidelbergen_US
dc.relation.ispartofEuropean Physical Journal Plusen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.titleStrain in BInGaN thin layers grown in nonpolar and semipolar directionsen_US
dc.typeArticleen_US

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