Frequency-Dependent Admittance Analysis of the Metal-Semiconductor Structure With an Interlayer of Zn-Doped Organic Polymer Nanocomposites

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dc.authoridTecimer, Huseyin/0000-0002-8211-8736
dc.contributor.authorTecimer, Huseyin
dc.contributor.authorTan, Serhat Orkun
dc.contributor.authorAltindal, Semsettin
dc.date.accessioned2024-09-29T16:04:30Z
dc.date.available2024-09-29T16:04:30Z
dc.date.issued2018
dc.departmentKarabük Üniversitesien_US
dc.description.abstractThe capacitance-voltage (C-V) and conductance-voltage (G/omega-V) data for Al/(0.07Zn-doped polyvinyl alcohol)/p-Si structure have been performed (at +/- 6-V biases) in a frequency interval of 1-400 kHz at room temperature. Utilizing form conductance method, N-ss values were specified from admittance measurements. The reason of higher C and G values obtained at lower frequencies was ascribed to the surface states located atMS interface and insulator layer. The increment at capacitance and conductance was occurred in consequence of the ac signal that followed easily by the surface states at these lower frequencies. The surface states existence also generates peaks at conductance versus logarithm of frequency (Gp/omega-log(f)) plots under distinct voltage values. The acquired values of Nss and relaxation time (tau) are in the interval of 1.94 x 10(14)-1.67 x 10(14) eV(-1).cm(-2) and 2.81 x 10(-3)-1.30 x 10(-5) s, respectively.en_US
dc.identifier.doi10.1109/TED.2017.2778023
dc.identifier.endpage236en_US
dc.identifier.issn0018-9383
dc.identifier.issn1557-9646
dc.identifier.issue1en_US
dc.identifier.scopus2-s2.0-85037573608en_US
dc.identifier.scopusqualityQ2en_US
dc.identifier.startpage231en_US
dc.identifier.urihttps://doi.org/10.1109/TED.2017.2778023
dc.identifier.urihttps://hdl.handle.net/20.500.14619/6168
dc.identifier.volume65en_US
dc.identifier.wosWOS:000418753200033en_US
dc.identifier.wosqualityQ2en_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.language.isoenen_US
dc.publisherIeee-Inst Electrical Electronics Engineers Incen_US
dc.relation.ispartofIeee Transactions On Electron Devicesen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectAdmittance measurementsen_US
dc.subjectfrequency dependenceen_US
dc.subjectmetal-polymer-semiconductor (MPS) structureen_US
dc.subjectrelaxation timeen_US
dc.subjectsurface statesen_US
dc.titleFrequency-Dependent Admittance Analysis of the Metal-Semiconductor Structure With an Interlayer of Zn-Doped Organic Polymer Nanocompositesen_US
dc.typeArticleen_US

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