Investigation of photodetector performance based on methylammonium lead halide perovskites/reduced graphene oxide heterostructure
Küçük Resim Yok
Tarih
2023
Dergi Başlığı
Dergi ISSN
Cilt Başlığı
Yayıncı
Springer
Erişim Hakkı
info:eu-repo/semantics/closedAccess
Özet
The remarkable advancements achieved in the field of perovskite materials have spurred the development of photodetectors, playing a pivotal role in diverse optoelectronic applications. Among these, heterostructured perovskite-based photodetectors have emerged as a superior choice, surpassing the performance capabilities of their pure perovskite counterparts. This study presents the fabrication of an rGO/MAPbI3 heterostructured photodetector via the spin-coating technique. A comprehensive structural analysis of the device was conducted, encompassing X-ray diffraction, scanning electron microscopy, and Fourier-transform infrared spectroscopy. Current-voltage (I-V) and capacitance-voltage (C-V) measurements, performed under various illumination conditions as well as in the absence of light, unequivocally demonstrate the photodiode characteristics of the device. The data reveal a direct correlation between illumination intensity and both current and capacitance, substantiating the photodetector's responsiveness. Notably, the calculated photosensitivity values S (%) of the Al/Gra/p-Si device, measured under a reverse bias of - 2 V, exhibit a range, varying from 42,000 to 79,300%. Furthermore, observations suggest a decrease in series resistance with increasing illumination intensity, while the ideality factor and barrier height values show an opposite trend. In addition, frequency-dependent measurements divulge a decrease in capacitance as the frequency escalates. These findings can be elucidated through the interactions involving light-induced charges at the interface between the rGO oxide layer and the semiconductor, coupled with the dynamic fluctuations in quasi-Fermi levels within the state of equilibrium.
Açıklama
Anahtar Kelimeler
Solar-Cells, Intensity, Growth
Kaynak
Journal of Materials Science-Materials in Electronics
WoS Q Değeri
Q2
Scopus Q Değeri
Q2
Cilt
34
Sayı
34
