High temperature thermopower of sol-gel processed Zn1-x-y Al x Me y O (Me: Ga, In)

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dc.authoridDEMIRCI, SELIM/0000-0003-3482-7957
dc.authoridKilinc, Enes/0000-0002-9585-998X
dc.authoridUYSAL, Fatih/0000-0001-5883-9317
dc.contributor.authorKilinc, Enes
dc.contributor.authorDemirci, Selim
dc.contributor.authorUysal, Fatih
dc.contributor.authorCelik, Erdal
dc.contributor.authorKurt, Huseyin
dc.date.accessioned2024-09-29T15:51:15Z
dc.date.available2024-09-29T15:51:15Z
dc.date.issued2017
dc.departmentKarabük Üniversitesien_US
dc.description.abstractIn this study, dually doped samples of Zn1-x-y Al (x) Me (y) O (Me: Ga, In) were prepared by sol-gel process followed by hot isostatic pressing for high temperature thermoelectric applications. Material characterizations were performed with differential thermal analysis-thermogravimetry, Fourier transform infrared spectroscopy and X-ray diffraction on the target phases. Successful doping of the samples was confirmed by X-ray photoelectron spectroscopy and energy dispersive X-ray analysis. Thermopower values of the samples are found to be relatively high in analogy to semiconducting behavior in which negative values indicate electrons are the dominant charge carriers (n-type). Substitution of Zn2+ by Ga3+ and In3+ for Zn1-x-y Al (x) Me (y) O (Me: Ga, In) increases electron concentration in the samples and thereby decreases the thermopower values compared to Zn0.98Al0.02O. Considering the absolute values, In doped samples have higher thermopower (alpha (max) = -162 A mu V/K at 585 A degrees C for Zn0.96Al0.02In0.02O) compared to the Ga doped sample. Al and In dually doped Zn0.96Al0.02In0.02O could be considered as a promising n-type thermoelectric material for high temperature applications.en_US
dc.description.sponsorshipScientific and Technological Research Council of Turkey (TUBITAK) [115M579]en_US
dc.description.sponsorshipThis work was supported by the Scientific and Technological Research Council of Turkey (TUBITAK) under Project No. 115M579. We would like to thank to Dr. Umut Aydemir and Prof. G. J. Snyder at Northwestern University in Evanston, IL, USA for thermopower measurements.en_US
dc.identifier.doi10.1007/s10854-017-6982-7
dc.identifier.endpage11778en_US
dc.identifier.issn0957-4522
dc.identifier.issn1573-482X
dc.identifier.issue16en_US
dc.identifier.scopus2-s2.0-85018853530en_US
dc.identifier.scopusqualityQ2en_US
dc.identifier.startpage11769en_US
dc.identifier.urihttps://doi.org/10.1007/s10854-017-6982-7
dc.identifier.urihttps://hdl.handle.net/20.500.14619/3976
dc.identifier.volume28en_US
dc.identifier.wosWOS:000406196200027en_US
dc.identifier.wosqualityQ2en_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.language.isoenen_US
dc.publisherSpringeren_US
dc.relation.ispartofJournal of Materials Science-Materials in Electronicsen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectThermoelectric Transport-Propertiesen_US
dc.subjectDoped Znoen_US
dc.titleHigh temperature thermopower of sol-gel processed Zn1-x-y Al x Me y O (Me: Ga, In)en_US
dc.typeArticleen_US

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