The possible current-conduction mechanism in the Au/(CoSO4-PVP)/n-Si junctions

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dc.authoridbadali, Yosef/0000-0001-7723-4188
dc.authoridGUNESER, Muhammet Tahir/0000-0003-3502-2034
dc.authoridElamen, Hasan Meloud M/0000-0003-0037-3264
dc.contributor.authorElamen, Hasan
dc.contributor.authorBadali, Yosef
dc.contributor.authorGuneser, Muhammet Tahir
dc.contributor.authorAltindal, Semsettin
dc.date.accessioned2024-09-29T15:51:16Z
dc.date.available2024-09-29T15:51:16Z
dc.date.issued2020
dc.departmentKarabük Üniversitesien_US
dc.description.abstractThe possible current-conduction mechanism (CCMs) of the Au/CoSO4-PVP/n-Si junctions was investigated using temperature-dependence current-voltage (I-V) experiments over 100-360 K. The experimental results showed that the value of BH increases approximately linearly with increasing temperature. Such positive temperature coefficient (alpha = Delta phi(B0)/Delta T) is in agreement with the reported negative temperature coefficient of the bandgap of Si (= - 0.473 meV/K). The (n(ap)(-1)-1) vsq/2kT curves have different characters in two temperature ranges due to having separate two barrier distributions. The rho(2)and rho(3)values obtained from intercept and slope of these curves as 0.521 V and 0.011 V for 240-360 K temperature range and 0.737 V and 0.004 V for the 100-220 K range. This results show that the high temperature region with smaller rho(2)and larger rho(3)voltage deformation coefficients has a wider and greater of the barrier height distribution than the second region. As an evidence for the Gaussian distribution, the phi(B0)and standard deviation (sigma(0)) were derived from the intercept and slope of the phi(B0)-q/2kT curves as 1.14 eV and 0.163 V at high temperatures and 0.62 eV and 0.088 V at low temperatures. The Richardson constant obtained as 102 A/cm(2)K(2)for 240-360 K temperature range using standard deviation value which is similar to the theoretical Richardson constant value of silicon (112 A/cm(2)K(2)). For each temperature, the profile ofN(ss)vs (E-c-E-ss) was provided using the voltage-dependent effective barrier height (phi(e)) value. It was observed that these surface conditions decreased with increasing temperature.en_US
dc.identifier.doi10.1007/s10854-020-04406-3
dc.identifier.endpage18648en_US
dc.identifier.issn0957-4522
dc.identifier.issn1573-482X
dc.identifier.issue21en_US
dc.identifier.scopus2-s2.0-85090970844en_US
dc.identifier.scopusqualityQ2en_US
dc.identifier.startpage18640en_US
dc.identifier.urihttps://doi.org/10.1007/s10854-020-04406-3
dc.identifier.urihttps://hdl.handle.net/20.500.14619/3987
dc.identifier.volume31en_US
dc.identifier.wosWOS:000569641800004en_US
dc.identifier.wosqualityQ3en_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.language.isoenen_US
dc.publisherSpringeren_US
dc.relation.ispartofJournal of Materials Science-Materials in Electronicsen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectDouble Gaussian Distributionen_US
dc.subjectElectron-Transporten_US
dc.subjectSchottky Diodesen_US
dc.subjectBarrier Heightsen_US
dc.subjectTemperature-Dependenceen_US
dc.subjectVoltageen_US
dc.subjectSien_US
dc.titleThe possible current-conduction mechanism in the Au/(CoSO4-PVP)/n-Si junctionsen_US
dc.typeArticleen_US

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