The determination of the temperature and voltage dependence of the main device parameters of Au/7%Gr-doped PVA/n-GaAs-type Schottky Diode (SD)
Küçük Resim Yok
Tarih
2020
Dergi Başlığı
Dergi ISSN
Cilt Başlığı
Yayıncı
Springer
Erişim Hakkı
info:eu-repo/semantics/closedAccess
Özet
There are several methods used to obtain the basic diode parameters that affect the diode quality of Schottky diodes (SD) such as ideality factor (n), barrier height (?Bo), and series resistance (Rs). In this study, it is aimed to compare the results using Ohm’s law, Thermionic Emission theory (TE), Norde and Cheung-Cheung functions. The I–V measurement of the Au/7%Gr-doped PVA/n-GaAs type SD was taken in the range of 80–360 K in 20 K steps. Considering that each method is effective in the different voltage region of the I–V curve and the parameters are strongly voltage-dependent, the results are compatible with each other. Also, the interface states (Nss) were calculated with and without Rs for each temperature value, and it was attained that the effect of Rs reduced Nss values by almost 1 degree. This result reveals the importance of the Rs parameter for SDs. As a result, it is plainly represented that the basic diode parameters n, Rs and ?Bo values are strongly dependent on temperature and voltage, and affected by barrier inhomogeneity and surface states. © 2020, Springer Science+Business Media, LLC, part of Springer Nature.
Açıklama
Anahtar Kelimeler
Diodes, Electric resistance, Interface states, Thermionic emission, Barrier inhomogeneities, Device parameters, Different voltages, Ideality factors, Series resistances, Temperature values, Thermionic emission theory, Voltage dependence, Schottky barrier diodes
Kaynak
Journal of Materials Science: Materials in Electronics
WoS Q Değeri
Scopus Q Değeri
Q2
Cilt
31
Sayı
20
