Optical, electrical, structural and magnetic properties of BiSe thin films produced by CBD on different substrates for optoelectronics applications

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dc.authoridkariper, ishak afsin/0000-0001-9127-301X
dc.authoridAYDIN, FATIH/0000-0002-6462-4854
dc.authoridMEYDANERI TEZEL, FATMA/0000-0003-1546-875X
dc.contributor.authorAydin, Fatih
dc.contributor.authorTezel, Fatma Meydaneri
dc.contributor.authorKariper, I. Afsin
dc.date.accessioned2024-09-29T16:03:04Z
dc.date.available2024-09-29T16:03:04Z
dc.date.issued2019
dc.departmentKarabük Üniversitesien_US
dc.description.abstractBiSe thin films have been grown on substrates as PMMA, ITO, glass and Si wafer by using chemical bath deposition (CBD) method. Deposition temperature and time and pH are kept to be constant during the production of the thin films. The thickness of BiSe thin films, which are produced on ITO, glass, PMMA and Si wafer substrate are 513, 468, 1039 and 260 nm, respectively. According to GAXRD results, the films, which are grown on glass and PMMA substrate, have amorphous structure, but, the films, which are grown on ITO and Si wafer substrate, have peaks of Bi2Se3 crystal. Grain sizes, crystallization number per unit area and dislocation density for ITO and Si wafer substrate are calculated as 112.40 nm and 43.04 nm; 2.25 x 10(-5) and 7.91 x 10(-5) (1/nm(2)); 40.11 x 10(-5) (1/nm(2)) and 53.96 x 10(-5) (1/nm(2)), respectively. The contact angles and critical surface tension of distilled water, ethylene glycol, formamide and diiodamethane liquids for thin films grown on glass, ITO, PMMA and Si wafers were obtained by the Zisman method. The % transmittance and % reflectance values of thin films grown on glass, ITO, PMMA are calculated as % T: 79.90, 92.76 and 67.37; % R: 6.18, 2.07 and 10.59, respectively. Eg values of thin films grown on glass, ITO, PMMA are calculated as Eg = 1.92; 2.18; 1.60 eV. The extinction coefficients, refractive indexes and relative dielectric constants of thin films grown on glass, ITO, PMMA are calculated as k = 0.007; 0.002 and 0.012; n = 1.65; 1.34 and 1.96; epsilon(1) = 0.271; 0.083 and 0.528 respectively. Sheet resistance, hall mobility, sheet carrier densities, bulk carrier densities and conductivity types for glass, ITO, PMMA and Si are 6.52 x 10(7), 6.65 x 10(1), 1.09 x 10(8) and 6.45 x 10(2) (Omega/cm(2)); 2.38, 1.21 x 10(-1), 5.34 and 1.52 (cm(2)/V.s); 4.01 x 10(10), 7.71 x 10(17), 1.06 x 10(10) and 6.34 x 10(15) (cm(-2)); 4.58 x 10(14), 1.50 x 10(22), 1.02 x 10(14) and 2.89 x 10(20) (cm(-3)); p, n, p and p, respectively. In addition, I-V characteristics and changes of magnetoresistance values versus magnetic field of the thin films are obtained by Van der Pauw method and HEMS.en_US
dc.description.sponsorshipKarabuk University Scientific Research Project Unit [KBU-BAP-16/1-YL-143]en_US
dc.description.sponsorshipThis work was supported by the Karabuk University Scientific Research Project Unit under Contract No: KBU-BAP-16/1-YL-143. The authors would like to thank Karabuk University Scientific Research Project Unit.en_US
dc.identifier.doi10.1088/2053-1591/aae9bf
dc.identifier.issn2053-1591
dc.identifier.issue1en_US
dc.identifier.scopus2-s2.0-85056087052en_US
dc.identifier.scopusqualityQ2en_US
dc.identifier.urihttps://doi.org/10.1088/2053-1591/aae9bf
dc.identifier.urihttps://hdl.handle.net/20.500.14619/5880
dc.identifier.volume6en_US
dc.identifier.wosWOS:000448882200002en_US
dc.identifier.wosqualityQ3en_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.language.isoenen_US
dc.publisherIop Publishing Ltden_US
dc.relation.ispartofMaterials Research Expressen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectcrystal growthen_US
dc.subjectthin film depositionen_US
dc.subjectsurface propertiesen_US
dc.subjectmagnetoresistanceen_US
dc.subjectoptical band gapen_US
dc.subjectcarrier densityen_US
dc.titleOptical, electrical, structural and magnetic properties of BiSe thin films produced by CBD on different substrates for optoelectronics applicationsen_US
dc.typeArticleen_US

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