Comparison of dielectric characteristics for metal-semiconductor structures fabricated with different interlayers thicknesses

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dc.authoridTecimer, Huseyin/0000-0002-8211-8736
dc.contributor.authorArslan, Bilal
dc.contributor.authorTan, Serhat Orkun
dc.contributor.authorTecimer, Huseyin
dc.contributor.authorAltindal, Semsettin
dc.date.accessioned2024-09-29T15:51:16Z
dc.date.available2024-09-29T15:51:16Z
dc.date.issued2021
dc.departmentKarabük Üniversitesien_US
dc.description.abstractThe dielectric properties of MS structures without interlayer and with Al2O3 interlayer have been investigated in a wide frequency range under forward and reverse biases. In this context, parameters such as loss tangent (tan delta), dielectric constant (epsilon '), dielectric loss (epsilon '') were calculated from the capacitance and conductivity data. The observed changes in dielectric parameters have been attributed to the coupling mechanisms between charges placed at the interface states, surface and bipolar polarization, and traps. The experimental results clearly indicate that the values of epsilon ', epsilon '' and tan delta vary significantly with frequency and voltage. That is, the thickness of the interlayer changes considerably the dielectric properties of the structure. As a result, it has been revealed that the desired device properties can be achieved by varying the thickness of the interlayers.en_US
dc.description.sponsorshipKarabuk University Scientific Research Project [KBU -BAP-18YL-187]en_US
dc.description.sponsorshipThis project was supported by the Karabuk University Scientific Research Project with KBU -BAP-18YL-187 Project Number.en_US
dc.identifier.doi10.1007/s10854-021-07047-2
dc.identifier.endpage26708en_US
dc.identifier.issn0957-4522
dc.identifier.issn1573-482X
dc.identifier.issue22en_US
dc.identifier.scopus2-s2.0-85115779028en_US
dc.identifier.scopusqualityQ2en_US
dc.identifier.startpage26700en_US
dc.identifier.urihttps://doi.org/10.1007/s10854-021-07047-2
dc.identifier.urihttps://hdl.handle.net/20.500.14619/3989
dc.identifier.volume32en_US
dc.identifier.wosWOS:000701018300009en_US
dc.identifier.wosqualityQ2en_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.language.isoenen_US
dc.publisherSpringeren_US
dc.relation.ispartofJournal of Materials Science-Materials in Electronicsen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectSchottkyen_US
dc.subjectConductivityen_US
dc.subjectDiodesen_US
dc.titleComparison of dielectric characteristics for metal-semiconductor structures fabricated with different interlayers thicknessesen_US
dc.typeArticleen_US

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