The Role of Co/Zn-Doped Organic Interlayer on the Operating Performance of Schottky Devices as an Ionizing Radiation Sensor

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dc.authoridKaymaz, Ahmet/0000-0003-2262-1599
dc.contributor.authorKaymaz, Ahmet
dc.contributor.authorBaydilli, Esra Evcin
dc.date.accessioned2024-09-29T16:04:29Z
dc.date.available2024-09-29T16:04:29Z
dc.date.issued2024
dc.departmentKarabük Üniversitesien_US
dc.description.abstractThis study was carried out to investigate the suitability of a Schottky device with a Co/Zn-doped organic interlayer polyvinyl alcohol (PVA) for use in radiation environments such as space (satellite systems) or nuclear plants. The current and capacitance-conductance data were obtained before and after radiation exposure and for some specific days after irradiation to understand whether the device is suitable for use as a rectifier contact or an ionizing radiation sensor, especially for satellite systems. Thus, it was observed that the current parameters tended to return to their original state in the early days, although the device showed a significant response to gamma rays. On the other hand, it was observed that the parameters obtained from the impedance spectroscopy methods remained stable for a while after radiation and then tended to approach their initial state. These behaviors occur due to the relaxation time of the radiation-induced surface states, and these sensitive parameters cannot prevent the device from being used as a radiation sensor or rectifier contact (i.e., MPS-type Schottky diode). As a result, it can be said that the device is a good candidate for use as a radiation sensor at first glance. However, these pieces of information are insufficient to use the device as a commercial sensor, and the device must successfully pass further experimental tests to decide this result.en_US
dc.identifier.doi10.1109/JSEN.2024.3387738
dc.identifier.endpage17700en_US
dc.identifier.issn1530-437X
dc.identifier.issn1558-1748
dc.identifier.issue11en_US
dc.identifier.scopus2-s2.0-85190818568en_US
dc.identifier.scopusqualityQ1en_US
dc.identifier.startpage17693en_US
dc.identifier.urihttps://doi.org/10.1109/JSEN.2024.3387738
dc.identifier.urihttps://hdl.handle.net/20.500.14619/6152
dc.identifier.volume24en_US
dc.identifier.wosWOS:001280106300001en_US
dc.identifier.wosqualityN/Aen_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.language.isoenen_US
dc.publisherIeee-Inst Electrical Electronics Engineers Incen_US
dc.relation.ispartofIeee Sensors Journalen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectRadiation effectsen_US
dc.subjectIonizing radiation sensorsen_US
dc.subjectPerformance evaluationen_US
dc.subjectProductionen_US
dc.subjectPlasticsen_US
dc.subjectMetalsen_US
dc.subjectVoltage measurementen_US
dc.subjectGamma-ray effectsen_US
dc.subjectionizing radiation sensorsen_US
dc.subjectmodern electronic devicesen_US
dc.subjectMPS-type Schottky devicesen_US
dc.subjectsatellite systemsen_US
dc.subjectSchottky devicesen_US
dc.titleThe Role of Co/Zn-Doped Organic Interlayer on the Operating Performance of Schottky Devices as an Ionizing Radiation Sensoren_US
dc.typeArticleen_US

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