Frequency dependent electrical and dielectric properties of the Au/(RuO2: PVC)/n-Si (MPS) structures
dc.authorid | GUNESER, Muhammet Tahir/0000-0003-3502-2034 | |
dc.contributor.author | Guneser, Muhammet Tahir | |
dc.contributor.author | Elamen, Hasan | |
dc.contributor.author | Badali, Yosef | |
dc.contributor.author | Altindal, Semsettin | |
dc.date.accessioned | 2024-09-29T16:00:31Z | |
dc.date.available | 2024-09-29T16:00:31Z | |
dc.date.issued | 2023 | |
dc.department | Karabük Üniversitesi | en_US |
dc.description.abstract | In this study, the electrical and dielectric characteristics of the Au/(RuO2:PVC)/n-Si structures were analyzed using the impedance spectroscopy method, including capacitance/conductance (C - G/omega) measurements in wide voltage and frequency ranges (+4 V, 5 kHz - 5 MHz) at room temperature. The main electrical parameters such as concentration of donor atoms (N-D), diffusion potential (V-D), depletion layer thickness (W-D), Fermi energy level (E-F), barrier height (phi(B)), and maximum electric field (E-m) were extracted for each measured frequency. The phi(B), W-D, and E-F values are increasing with increased frequency, while N-D and E-m exponentially decrease. The surfacestates (N-SS) were evaluated using the low-high-frequency capacitance technique. Furthermore, the basic dielectric parameters such as tangent-loss (tan delta), electrical conductivity (sigma(ac)), real and imaginary parts of epsilon*, electric-modulus (M*), and complex impedance (Z*) were investigated. The obtained results indicate that the N-SS, and RuO2:PVC organic interlayer are more effective on C and G/omega measurements. | en_US |
dc.identifier.doi | 10.1016/j.physb.2023.414791 | |
dc.identifier.issn | 0921-4526 | |
dc.identifier.issn | 1873-2135 | |
dc.identifier.scopus | 2-s2.0-85150246513 | en_US |
dc.identifier.scopusquality | Q2 | en_US |
dc.identifier.uri | https://doi.org/10.1016/j.physb.2023.414791 | |
dc.identifier.uri | https://hdl.handle.net/20.500.14619/5206 | |
dc.identifier.volume | 657 | en_US |
dc.identifier.wos | WOS:001036178500001 | en_US |
dc.identifier.wosquality | Q2 | en_US |
dc.indekslendigikaynak | Web of Science | en_US |
dc.indekslendigikaynak | Scopus | en_US |
dc.language.iso | en | en_US |
dc.publisher | Elsevier | en_US |
dc.relation.ispartof | Physica B-Condensed Matter | en_US |
dc.relation.publicationcategory | Makale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı | en_US |
dc.rights | info:eu-repo/semantics/closedAccess | en_US |
dc.subject | Schottky structures | en_US |
dc.subject | Electrical and dielectric properties | en_US |
dc.subject | C-V and G/omega-V characteristics | en_US |
dc.subject | RuO2:PVC | en_US |
dc.title | Frequency dependent electrical and dielectric properties of the Au/(RuO2: PVC)/n-Si (MPS) structures | en_US |
dc.type | Article | en_US |