Bright Visible Light Extraction from Amorphous Silicon Nitride Heterojunction Pin Diode
Küçük Resim Yok
Tarih
2011
Dergi Başlığı
Dergi ISSN
Cilt Başlığı
Yayıncı
Electrochemical Soc Inc
Erişim Hakkı
info:eu-repo/semantics/closedAccess
Özet
We report the transformation of an ordinary hydrogenated amorphous silicon nitride based heterojunction pin diode into a strong visible light emitting electroluminescent device. This forming process (FP) comprises Joule heating induced crystallization during the application of sufficiently high forward bias to the fresh diode. FP starts at an arbitrary point and continues until the accompanying visible light is uniformly emitted from the whole diode. This remarkable phenomenon is presented by real-time photography of the lateral propagation of the formed region. Finally, both the role of window electrode for a successful FP and the luminescence mechanism after FP are briefly discussed. (C) 2011 The Electrochemical Society. [DOI: 10.1149/1.3592232] All rights reserved.
Açıklama
Anahtar Kelimeler
amorphous state, crystallisation, electroluminescent devices, hydrogen, hydrogenation, photography, p-i-n diodes, silicon compounds
Kaynak
Electrochemical and Solid State Letters
WoS Q Değeri
Q2
Scopus Q Değeri
N/A
Cilt
14
Sayı
8
