Evaluation of electrical and photovoltaic behaviours as comparative of Au/n-GaAs (MS) diodes with and without pure and graphene (Gr)-doped polyvinyl alcohol (PVA) interfacial layer under dark and illuminated conditions

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dc.authoridTecimer, Huseyin/0000-0002-8211-8736
dc.authoridUslu Tecimer, Habibe/0000-0002-0094-7427
dc.authoridCICEK, OSMAN/0000-0002-2765-4165
dc.contributor.authorCicek, O.
dc.contributor.authorTecimer, H. Uslu
dc.contributor.authorTan, S. O.
dc.contributor.authorTecimer, H.
dc.contributor.authorAltindal, S.
dc.contributor.authorUslu, I.
dc.date.accessioned2024-09-29T15:55:14Z
dc.date.available2024-09-29T15:55:14Z
dc.date.issued2016
dc.departmentKarabük Üniversitesien_US
dc.description.abstractAu/n-GaAs (MS) type Schottky diodes (SDs) were fabricated with and without pure and Gr-doped PVA interlayer to evaluate the effects of Gr-doped PVA interlayer on the basic electrical parameters (i.e. saturation current (I-o), ideality factor (n), barrier height (Phi(Bo)), series (R-s) and shunt resistances (R-sh) both under dark and illuminated conditions (50-200 W), at room temperature. Using different calculation methods (i.e. thermionic emission (TE) model, Ohm's Law and Norde's method), these parameters were obtained from the current -voltage (I -V) data and compared with each other in various conditions. In our research, it is clear that there are a decrease in R-s value and an increase in R-sh value for Gr-doped PVA in comparison with the pure PVA structure under dark and illuminated conditions, therefore rectifier rate (RR = I-F/I-R), is the proof of the quality for diodes, significantly improved. Also, the Phi(Bo) values with interlayer (pure and Gr-doped PVA) are lower than without. Consequently, these results indicate that the PVA (pure and Gr-doped) changed effectively the BH according to other structure and, moreover, Gr-doped PVA layer significantly improved the quality of Au/PVA/n-GaAs structure under dark and illuminated conditions. (C) 2016 Elsevier Ltd. All rights reserved.en_US
dc.description.sponsorshipKarabuk University Scientific Research Project (KBUBAP) [KBU-BAP-14/2-DR-005]en_US
dc.description.sponsorshipWe thank ikram Orak, PhD, Vocational School of Health Services, Bingol University, for his support during our study. This study was supported by Karabuk University Scientific Research Project (KBUBAP) [project numbers KBU-BAP-14/2-DR-005]. Each author wishes to thank KBUBAP for contributions.en_US
dc.identifier.doi10.1016/j.compositesb.2016.05.042
dc.identifier.endpage268en_US
dc.identifier.issn1359-8368
dc.identifier.issn1879-1069
dc.identifier.scopus2-s2.0-84971224783en_US
dc.identifier.scopusqualityQ1en_US
dc.identifier.startpage260en_US
dc.identifier.urihttps://doi.org/10.1016/j.compositesb.2016.05.042
dc.identifier.urihttps://hdl.handle.net/20.500.14619/4523
dc.identifier.volume98en_US
dc.identifier.wosWOS:000379106400026en_US
dc.identifier.wosqualityQ1en_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.language.isoenen_US
dc.publisherElsevier Sci Ltden_US
dc.relation.ispartofComposites Part B-Engineeringen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectNano-structuresen_US
dc.subjectPolymer (textile) fibreen_US
dc.subjectElectrical propertiesen_US
dc.titleEvaluation of electrical and photovoltaic behaviours as comparative of Au/n-GaAs (MS) diodes with and without pure and graphene (Gr)-doped polyvinyl alcohol (PVA) interfacial layer under dark and illuminated conditionsen_US
dc.typeArticleen_US

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