Dielectric properties, electric modulus and conductivity profiles of Al/Al2O3/p-Si type MOS capacitor in large frequency and bias interval

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dc.authoridTurk, Cagri Gokhan/0000-0001-9940-6948
dc.contributor.authorTan, Serhat Orkun
dc.contributor.authorCicek, Osman
dc.contributor.authorTurk, Cagri Gokhan
dc.contributor.authorAltindal, Semsettin
dc.date.accessioned2024-09-29T15:57:35Z
dc.date.available2024-09-29T15:57:35Z
dc.date.issued2022
dc.departmentKarabük Üniversitesien_US
dc.description.abstractThe letter reports that the impedance spectroscopy method has been performed to acquire impeccable results on the ac electric conductivity (sigma(ac)) dielectric (epsilon' and epsilon '') and electric modulus (M' and M '') components of the Al/Al2O3/p-Si type MOS capacitor. The relevant parameters are defined with C-V-f and G/omega-V-f data between 1 kHz and 5 MHz and +/- 3 V at room temperature. Both parts of dielectric constants are decreasing at high frequencies to prevent the interface dipoles from gaining enough time to return to the alternative area. Depending on the restructuring and reorganization of surface states (N-ss) in the alternative field, tan delta decreases at higher frequencies. The M' values reach maximum by frequency increment in the depletion region, while M '' values shift to the forward biases depending on a certain density distribution of N-ss. The sigma(ac) values increase with increasing frequency in the accumulation region depending on series resistance. Considering polarization processes, surface conditions (N-ss) and Al2O3 interlayer, frequency and biases are extremely effective and dependent on the dielectric specifications, electrical modulus and conductivity. (C) 2021 Karabuk University. Publishing services by Elsevier B.V.en_US
dc.description.sponsorshipGazi University Scientific Research Project [GU-BAP.05/2019-26]en_US
dc.description.sponsorshipThis study was supported by Gazi University Scientific Research Project. (Project Number: GU-BAP.05/2019-26).en_US
dc.identifier.doi10.1016/j.jestch.2021.05.021
dc.identifier.issn2215-0986
dc.identifier.scopus2-s2.0-85107780608en_US
dc.identifier.scopusqualityQ1en_US
dc.identifier.urihttps://doi.org/10.1016/j.jestch.2021.05.021
dc.identifier.urihttps://hdl.handle.net/20.500.14619/4907
dc.identifier.volume27en_US
dc.identifier.wosWOS:000821043900001en_US
dc.identifier.wosqualityQ1en_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.language.isoenen_US
dc.publisherElsevier - Division Reed Elsevier India Pvt Ltden_US
dc.relation.ispartofEngineering Science and Technology-An International Journal-Jestechen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/openAccessen_US
dc.subjectFrequency dependenceen_US
dc.subjectDielectric propertiesen_US
dc.subjectElectric modulusen_US
dc.subjectSurface statesen_US
dc.subjectPolarizationen_US
dc.subjectConductivityen_US
dc.titleDielectric properties, electric modulus and conductivity profiles of Al/Al2O3/p-Si type MOS capacitor in large frequency and bias intervalen_US
dc.typeArticleen_US

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