High temperature-stability of organic thin-film transistors based on quinacridone pigments

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dc.authoridCoskun, Halime/0000-0001-7284-2651
dc.authoridKanbur, Yasin/0000-0003-3996-458X
dc.contributor.authorKanbur, Yasin
dc.contributor.authorCoskun, Halime
dc.contributor.authorGlowacki, Eric Daniel
dc.contributor.authorIrimia-Vladu, Mihai
dc.contributor.authorSariciftci, Niyazi Serdar
dc.contributor.authorYumusak, Cigdem
dc.date.accessioned2024-09-29T16:00:29Z
dc.date.available2024-09-29T16:00:29Z
dc.date.issued2019
dc.departmentKarabük Üniversitesien_US
dc.description.abstractRobust organic thin-film transistors (OTFTs) with high temperature stability allow device integration with mass production methods like thermoforming and injection molding, and enable operation in extreme environment applications. Herein we elaborate a series of materials to make suitable gate dielectric and active semiconductor layers for high temperature stable OTFTs. We employ an anodized aluminum oxide layer passivated with cross-linked low-density polyethylene (LD-PE) to form a temperature-stable gate capacitor. As the semiconductor, we use quinacridone, an industrial organic colorant pigment produced on a mass scale. Evaporated MoOx/Ag source and drain electrodes complete the devices. Here we evaluate the performance of the OTFTs healing them in air from 100 degrees C in 25 degrees C increments up to 225 degrees C, holding each temperature for a period of 30 minutes. We find large differences in stability between quinacridone and its dimethylated derivative, with the former showing the best performance with only a factor of 2 decline in mobility after healing at 225 degrees C, and unaffected on/off ratio and threshold voltage. The approach presented here shows how industriallys calable fabrication of thermally robust OTFTs can be rationalized.en_US
dc.description.sponsorshipAustrian Research Promotion Agency (FFG) [842496]; Austrian Science Foundation (FWF) [Z 222-N19]; TUBITAK-BIDEBen_US
dc.description.sponsorshipThe work was funded by the Austrian Research Promotion Agency (FFG) within the project 3DFormOFETs [842496]. Niyazi Serdar Sariciftci acknowledges financial support of the Austrian Science Foundation (FWF) [Z 222-N19] within the Wittgenstein Prize. Yasin Kanbur is grateful to TUBITAK-BIDEB for the International Post-Doctoral Research Fellowship.en_US
dc.identifier.doi10.1016/j.orgel.2018.12.004
dc.identifier.endpage57en_US
dc.identifier.issn1566-1199
dc.identifier.issn1878-5530
dc.identifier.scopus2-s2.0-85058578476en_US
dc.identifier.scopusqualityQ1en_US
dc.identifier.startpage53en_US
dc.identifier.urihttps://doi.org/10.1016/j.orgel.2018.12.004
dc.identifier.urihttps://hdl.handle.net/20.500.14619/5184
dc.identifier.volume66en_US
dc.identifier.wosWOS:000455249800008en_US
dc.identifier.wosqualityQ2en_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.language.isoenen_US
dc.publisherElsevier Science Bven_US
dc.relation.ispartofOrganic Electronicsen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectQuinacridoneen_US
dc.subjectQuinacridone transistoren_US
dc.subjectPigment transistoren_US
dc.subjectOrganic field effect transistorsen_US
dc.subjectThermally stable transistoren_US
dc.subjectInjection moldingen_US
dc.subjectThermoformingen_US
dc.subjectAir stable transistoren_US
dc.subjectHydrogen-bonded semiconductoren_US
dc.subjectVacuum evaporated polyethyleneen_US
dc.titleHigh temperature-stability of organic thin-film transistors based on quinacridone pigmentsen_US
dc.typeArticleen_US

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