Investigation of gamma-irradiation effects on electrical characteristics of Al/(ZnO-PVA)/p-Si Schottky diodes using capacitance and conductance measurements

Basit Öğe Kaydı
dc.authoridEVCIN BAYDILLI, Esra/0000-0001-8582-5041
dc.authoridUslu Tecimer, Habibe/0000-0002-0094-7427
dc.authoridKaymaz, Ahmet/0000-0003-2262-1599
dc.contributor.authorKaymaz, Ahmet
dc.contributor.authorTecimer, Habibe Uslu
dc.contributor.authorBaydilli, Esra Evcin
dc.contributor.authorAltindal, Semsettin
dc.date.accessioned2024-09-29T15:51:16Z
dc.date.available2024-09-29T15:51:16Z
dc.date.issued2020
dc.departmentKarabük Üniversitesien_US
dc.description.abstractIn this study, Al/(ZnO-PVA)/p-Si (MPS type) Schottky diodes (SDs) were fabricated instead of metal-semiconductor (MS) type SDs with traditional insulator interfacial layer. Additionally, basic electrical parameters of these MPS-type SDs (such as doping acceptor atoms (N-A), depletion layer width (W-D), series resistance (R-s), barrier height (phi(B)), and surface states/traps (N-ss/N-it)) were found as a function of gamma-irradiation by using the capacitance/conductance-voltage (C/G-V) measurements. These measurements under 0-60 kGy radiation doses show that radiation-induced N-ss are more effective in the depletion layer. On the other hand, voltage-dependent profiles of R-s and N-ss were also obtained using Nicollian-Brews and Castagne-Vapaille methods, respectively. Additionally, the C/G-V characteristics were corrected before irradiation and after 60 kGy doses by considering the effects of R-s. These calculations show that R-s is more effective especially in the accumulation region and therefore, it must be considered in the calculations. All these results have indicated that MS-type SDs with (ZnO-PVA) polymer interfacial layer are very sensitive to gamma-irradiation. Hence, they can be successfully used as MPS-type detectors instead of MIS/MOS-type detectors. Hence, they can be successfully used as MPS-type detectors instead of MIS/MOS-type detectors, since polymer layers can be easily grown compared to insulator/oxide layers. Also, they are cheaper, lighter, more flexible, and require low energy consumption. In conclusion, it can be said that although all parameters were affected by gamma-irradiation, no significant defect/deterioration was observed in applied dose range which would hinder the operation of these MPS-type SDs.en_US
dc.description.sponsorshipGazi University Scientific Research Project [GU-BAP.05/2019-26]en_US
dc.description.sponsorshipThis study was supported by Gazi University Scientific Research Project. (Project Number GU-BAP.05/2019-26).en_US
dc.identifier.doi10.1007/s10854-020-03370-2
dc.identifier.endpage8358en_US
dc.identifier.issn0957-4522
dc.identifier.issn1573-482X
dc.identifier.issue11en_US
dc.identifier.scopus2-s2.0-85083511643en_US
dc.identifier.scopusqualityQ2en_US
dc.identifier.startpage8349en_US
dc.identifier.urihttps://doi.org/10.1007/s10854-020-03370-2
dc.identifier.urihttps://hdl.handle.net/20.500.14619/3985
dc.identifier.volume31en_US
dc.identifier.wosWOS:000526272000001en_US
dc.identifier.wosqualityQ3en_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.language.isoenen_US
dc.publisherSpringeren_US
dc.relation.ispartofJournal of Materials Science-Materials in Electronicsen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectG/Omega-V Characteristicsen_US
dc.subjectRay Irradiationen_US
dc.subjectDielectric-Propertiesen_US
dc.subjectZero-Biasen_US
dc.subjectIonizing-Radiationen_US
dc.subjectSeries-Resistanceen_US
dc.subjectInterface Statesen_US
dc.subjectMps Structureen_US
dc.subjectC-Ven_US
dc.subjectDensityen_US
dc.titleInvestigation of gamma-irradiation effects on electrical characteristics of Al/(ZnO-PVA)/p-Si Schottky diodes using capacitance and conductance measurementsen_US
dc.typeArticleen_US

Dosyalar

Koleksiyon

WoS İndeksli Yayınlar Koleksiyonu
Scopus İndeksli Yayınlar Koleksiyonu