Transport and luminescence phenomena in electroformed silicon nitride-based light emitting diode

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dc.contributor.authorAnutgan, M.
dc.contributor.authorAnutgan, T.
dc.contributor.authorAtilgan, I.
dc.contributor.authorKatircioglu, B.
dc.date.accessioned2024-09-29T16:02:53Z
dc.date.available2024-09-29T16:02:53Z
dc.date.issued2013
dc.departmentKarabük Üniversitesien_US
dc.description.abstractHydrogenated amorphous silicon nitride-based heterojunction pin diode was electroformed under sufficiently high forward bias stress leading to its instant nanocrystallization at room temperature. In order to investigate the origin of the accompanying bright visible light emission, current-voltage and electroluminescence (EL) characteristics of the electroformed diode were scanned over temperature. Electrical transport mechanism was analysed in the low, medium and high electric field regimes. Temperature and field dependence of thermal activation energy were discussed. EL characteristics were studied using the spectral energy distribution and the injection current dependence of its intensity. Thermal quenching data of EL and photoluminescence intensities were compared. Finally, the relationship between the electrical transport and luminescence phenomena was attempted to be interpreted within the frame of a self-consistent model.en_US
dc.identifier.doi10.1080/14786435.2013.807371
dc.identifier.endpage3352en_US
dc.identifier.issn1478-6435
dc.identifier.issn1478-6443
dc.identifier.issue24en_US
dc.identifier.scopus2-s2.0-84883599364en_US
dc.identifier.scopusqualityQ3en_US
dc.identifier.startpage3332en_US
dc.identifier.urihttps://doi.org/10.1080/14786435.2013.807371
dc.identifier.urihttps://hdl.handle.net/20.500.14619/5774
dc.identifier.volume93en_US
dc.identifier.wosWOS:000323633100007en_US
dc.identifier.wosqualityQ1en_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.language.isoenen_US
dc.publisherTaylor & Francis Ltden_US
dc.relation.ispartofPhilosophical Magazineen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectsilicon nitride heterojunction pin diodeen_US
dc.subjectelectroformingen_US
dc.subjectnanocrystallizationen_US
dc.subjectelectroluminescenceen_US
dc.subjectactivation energyen_US
dc.subjectband-tail transporten_US
dc.titleTransport and luminescence phenomena in electroformed silicon nitride-based light emitting diodeen_US
dc.typeArticleen_US

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