The effects of (Bi2Te3-Bi2O3-TeO2-PVP) interfacial film on the dielectric and electrical features of Al/p-Si (MS) Schottky barrier diodes (SBDs)

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dc.authoridFarazin, Javid/0000-0001-9636-4252
dc.authoridAzizian-Kalandaragh, Yashar/0000-0001-6181-3767
dc.authoridPirgholi Givi, Gholamreza/0000-0002-5328-0005
dc.contributor.authorAltindal, Semsettin
dc.contributor.authorFarazin, Javid
dc.contributor.authorPirgholi-Givi, Gholamreza
dc.contributor.authorMaril, Elif
dc.contributor.authorAzizian-Kalandaragh, Yashar
dc.date.accessioned2024-09-29T16:00:31Z
dc.date.available2024-09-29T16:00:31Z
dc.date.issued2020
dc.departmentKarabük Üniversitesien_US
dc.description.abstractThe influence of the inorganic/organic interfacial layer on the electric and dielectric performance of both Al/p-Si (MS) and Al/(Bi2Te3- Bi2O3- TeO2- PVP)/p-Si (MPS) type SBDs have been investigated. The material for the interfacial layer has been synthesized by the ultrasound-assisted method. FE-SEM, XRD, EDS, and UV-Vis techniques have been used for structural and optical characteristics of the prepared sample. The main electrical, dielectric, and electrical modulus parameters of these SBDs were obtained from the I-V and impedance spectroscopy measurements and using different calculation methods. The surface states (N-ss) have been calculated. The real and imaginary components of the permittivity (epsilon* = epsilon'-j epsilon ''), complex modulus (M* = M' +jM ''), dielectric loss tangent, and conductivity (sigma(ac)) values were also calculated from the (C/G-f) measurements in the wide range of frequency(100Hz-1MHz). We observed that (Bi2Te3-Bi2O3-TeO2-PVP) interlayer may be a good alternative to the low-dielectric insulator prepared by traditional methods.en_US
dc.description.sponsorshipGazi University Scientific Research Project [GU-BAP.05/2019-26]en_US
dc.description.sponsorshipThis study was supported by Gazi University Scientific Research Project. (Project Number: GU-BAP.05/2019-26).en_US
dc.identifier.doi10.1016/j.physb.2019.411958
dc.identifier.issn0921-4526
dc.identifier.issn1873-2135
dc.identifier.scopus2-s2.0-85078512649en_US
dc.identifier.scopusqualityQ2en_US
dc.identifier.urihttps://doi.org/10.1016/j.physb.2019.411958
dc.identifier.urihttps://hdl.handle.net/20.500.14619/5198
dc.identifier.volume582en_US
dc.identifier.wosWOS:000517950500034en_US
dc.identifier.wosqualityQ3en_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.language.isoenen_US
dc.publisherElsevieren_US
dc.relation.ispartofPhysica B-Condensed Matteren_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectElectricalen_US
dc.subjectDielectric and electric modulus propertiesen_US
dc.subjectI-V and C/G-f measurementsen_US
dc.subjectBi2Te3-Bi2O3-TeO2-PVP nanostructuresen_US
dc.titleThe effects of (Bi2Te3-Bi2O3-TeO2-PVP) interfacial film on the dielectric and electrical features of Al/p-Si (MS) Schottky barrier diodes (SBDs)en_US
dc.typeArticleen_US

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