Detection of current transport mechanisms for graphene-doped-PVA interlayered metal/semiconductor structures
Küçük Resim Yok
Tarih
2020
Dergi Başlığı
Dergi ISSN
Cilt Başlığı
Yayıncı
Elsevier
Erişim Hakkı
info:eu-repo/semantics/closedAccess
Özet
The possible current-transport mechanisms (CTMs) of Au/(%7Gr-doped)PVA/n-GaAs structure was examined between 80 K and 360 K. The forward bias semi-logarithmic I-V curves have two different linear regions; as 0.30 V and 0.56 V (Region I), and 0.72 V and 0.92 V (Region II). Contrary to classical thermionic emission (TE) theory, the ideality factor (n) decreases but the zero bias barrier height (Phi(Bo)) increases while the temperature increases for both regions. The plots of n vs Phi(B0), q/2 kT vs Phi(Bo) and q/2 kT vs n(-1)-1 have two linear regions from 80 K to 160 K and 180 K-360 K. This indicates the Double Gaussian Distribution (DGD). Experimental Richardson constant (A*) was acquired as 8.73 A/cm(2)K(2) and 8.14 A/cm(2)K(2) for Region I and II which are quite close to theoretical A* value for n-GaAs. Consequently, the predominant CTMs at M/S interfaces can be clarified by DGD on the basis of TE.
Açıklama
12th International Symposium on Hysteresis Modeling and Micromagnetics (HMM) -- MAY 19-22, 2019 -- Heraklion, GREECE
Anahtar Kelimeler
Current-transport mechanisms, Metal-polymer-semicondutor, Thermionic emission, Barrier height, Graphene doping
Kaynak
Physica B-Condensed Matter
WoS Q Değeri
Q3
Scopus Q Değeri
Q2
Cilt
598
