Illumination effect on admittance measurements of polyvinyl alcohol (Co, Zn-doped)/n-Si Schottky barrier diodes in wide frequency and applied bias voltage range

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dc.contributor.authorYeriskin, S.A.
dc.contributor.authorUslu, H.
dc.contributor.authorTunç, T.
dc.contributor.authorAltindal, S.
dc.date.accessioned2024-09-29T16:21:05Z
dc.date.available2024-09-29T16:21:05Z
dc.date.issued2011
dc.departmentKarabük Üniversitesien_US
dc.descriptionIstanbul Kultur University; Gebze Institute of Technology; Doga Nanobiotech Inc.; Terra Lab. Inc; LOT Oriel Group Europeen_US
dc.description1st International Congress on Advances in Applied Physics and Materials Science, APMAS2011 -- 12 May 2011 through 15 May 2011 -- Antalya --en_US
dc.description.abstractIn order to have a good interpretation of the illumination effect on the capacitance-voltage (C-V) and conductance-voltage (G/?-V) profiles, C-V and G/?-V characteristics of the polyvinyl alcohol (Co, Zn-Doped)/n-Si Schottky barrier diodes (SBDs) were investigated in the wide frequency and applied bias voltage ranges at room temperature. Experimental results show that the values of both C and G/? are strong functions of frequency and applied bias voltage in dark and under illumination (200 W) conditions. It is clear that the dispersion in C and G/? is considerably high in the depletion and accumulation regions due to illumination induced electron-hole pairs and series resistance (R s) effect, respectively. The values of C and G/? exponentially decrease with the increasing frequency and at high frequencies (f>100kHz) the values of C and G/? become almost independent of frequency both in dark under illumination. © 2011 American Institute of Physics.en_US
dc.identifier.doi10.1063/1.3663178
dc.identifier.endpage545en_US
dc.identifier.isbn978-073540971-2
dc.identifier.issn1551-7616
dc.identifier.scopus2-s2.0-84855465373en_US
dc.identifier.scopusqualityN/Aen_US
dc.identifier.startpage541en_US
dc.identifier.urihttps://doi.org/10.1063/1.3663178
dc.identifier.urihttps://hdl.handle.net/20.500.14619/9537
dc.identifier.volume1400en_US
dc.indekslendigikaynakScopusen_US
dc.language.isoenen_US
dc.relation.ispartofAIP Conference Proceedingsen_US
dc.relation.publicationcategoryKonferans Öğesi - Uluslararası - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/openAccessen_US
dc.subjectElectrical characteristicsen_US
dc.subjectFrequency and voltage dependenten_US
dc.subjectIllumination effecten_US
dc.subjectPVAen_US
dc.subjectSeries resistanceen_US
dc.titleIllumination effect on admittance measurements of polyvinyl alcohol (Co, Zn-doped)/n-Si Schottky barrier diodes in wide frequency and applied bias voltage rangeen_US
dc.typeConference Objecten_US

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