Semiconductor shallow impurity level transitions for terahertz generation and detection

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dc.contributor.authorAslana, B.
dc.contributor.authorYildirimb, H.
dc.contributor.authorKorkmaza, G.
dc.date.accessioned2024-09-29T16:22:04Z
dc.date.available2024-09-29T16:22:04Z
dc.date.issued2014
dc.departmentKarabük Üniversitesien_US
dc.descriptionUniversity of Shanghaien_US
dc.descriptionInternational Symposium on Ultrafast Phenomena and Terahertz Waves, ISUPTW 2014 -- 13 October 2014 through 14 October 2014 -- Shanghai -- 107838en_US
dc.description.abstract[No abstract available]en_US
dc.identifier.scopus2-s2.0-85118317817en_US
dc.identifier.scopusqualityN/Aen_US
dc.identifier.urihttps://hdl.handle.net/20.500.14619/9790
dc.indekslendigikaynakScopusen_US
dc.language.isoenen_US
dc.publisherOptical Society of Americaen_US
dc.relation.ispartofInternational Symposium on Ultrafast Phenomena and Terahertz Waves, ISUPTW 2014en_US
dc.relation.publicationcategoryKonferans Öğesi - Uluslararası - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.titleSemiconductor shallow impurity level transitions for terahertz generation and detectionen_US
dc.typeConference Objecten_US

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